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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory
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Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

机译：晶体记得：几种在电阻切换存储器中使用纳米晶体的方法

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摘要

The attractive usability of quantum phenomena in futuristic devices is possible by using zerodimensional systems like nanocrystals (NCs). The performance of nonvolatile flash memory devices has greatly benefited from the use of NCs over recent decades. The quantum abilities of NCs have been used to improve the reliability of flash devices. Its appeal is extended to the design of emerging devices such as resistive random- access memory (RRAM), a technology where the use of silicon is optional. Here, we are going to review the recent progress in the design, characterization, and utilization of NCs in RRAM devices. We will first introduce the physical design of the RRAM devices using NCs and the improvement of electrical performance in NC-RRAM over conventional ones. In particular, special care has been taken to review the ways of development provided by the NCs in the RRAM devices. In a broad sense, the NCs can play a charge trapping role in the NC-RRAM structure or it can be responsible for the localization and improvement of the stability of the conductive filament or it can play a part in the formation of the conductive filament chain by the NC migration under applied bias. Finally, the scope of NCs in the RRAM devices has also been discussed.
机译：量子现象在未来设备中的有吸引力的可用性通过使用zerodimensional系统，如纳米晶体（NCS）是可能的。非易失性闪存设备的性能有较大从使用的NC近几十年中受益。网络控制系统的量子能力都被用来改善闪存器件的可靠性。其吸引力延伸到新兴的设备的设计，例如电阻随机存取存储器（RRAM），一个技术，其中使用硅的是可选的。在这里，我们要审查设计，表征和在RRAM设备NC的利用的最新进展。首先，我们将介绍使用NCS和电气性能在NC-RRAM比以往提高了RRAM器件的物理设计。尤其是，特别已经采取谨慎措施，审查通过的RRAM设备的NC提供发展的途径。在广义上，所述的NC可以在NC-RRAM结构起到电荷俘获作用，或者它可以是负责对导电丝的稳定性的定位和改进，或者它可以在导电丝链的形成中发挥作用通过在施加偏压的NC迁移。最后，在RRAM设备NC的范围也进行了讨论。

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  • 作者

    Banerjee Writam; Liu Qi; Long Shibing; Lv Hangbing; Liu Ming;

  • 作者单位

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices &

    Integrated Technol 3 BeiTuCheng West Rd Beijing 100029 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices &

    Integrated Technol 3 BeiTuCheng West Rd Beijing 100029 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices &

    Integrated Technol 3 BeiTuCheng West Rd Beijing 100029 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices &

    Integrated Technol 3 BeiTuCheng West Rd Beijing 100029 Peoples R China;

    Chinese Acad Sci Inst Microelect Key Lab Microelect Devices &

    Integrated Technol 3 BeiTuCheng West Rd Beijing 100029 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;
  • 关键词

    resistive switching; RRAM; nanocrystal; defect engineering; electric field; ECM; VCM;

    机译：电阻切换;RRAM;纳米晶体;缺陷工程;电场;ECM;VCM;

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