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Growth of Centimeter‐Scale Monolayer and Few‐Layer WSe 22 Thin Films on SiO 22 /Si Substrate via Pulsed Laser Deposition

机译:厘米级单层和少数层的生长 2 2 SIO上的薄膜 2 2 / Si基材通过脉冲激光沉积

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Abstract > To date, the fabrication of highly uniform large‐scale monolayer and few‐layer p‐type WSe <sub>2</sub> throughout the entire substrate, especially on SiO <sub>2</sub> /Si substrates is significantly challenging and one of the most important issues. Here, the fabrication of highly uniform monolayer and few‐layer WSe <sub>2</sub> thin films on a centimeter‐scale SiO <sub>2</sub> /Si substrate via pulsed laser deposition is reported. The number of WSe <sub>2</sub> layers and the thickness, controlled by varying the number of laser pulses, is determined by transmission electron microscopy analysis. The high uniformity of the as‐grown WSe <sub>2</sub> thin film on the entire SiO <sub>2</sub> /Si substrate is verified by the uniform Raman peak position and intensity, estimated by Raman mapping. Using a conventional photolithography process, field effect transistors based on the as‐grown WSe <sub>2</sub> thin films are fabricated and their electrical characteristic is analyzed. </abstract> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译:</span><Abstract Type =“Main”XML:Lang =“en”> <标题类型=“main”>抽象</ title> > 迄今为止,制造高度均匀的大型单层和几层P型WSE <sub> 2 </ sub> 在整个基板中,特别是在SiO上 <sub> 2 </ sub> / SI基材是显着挑战性的,并且是最重要的问题之一。在此,制造高度均匀的单层和几层WSE <sub> 2 </ sub> 厘米级SiO上的薄膜 <sub> 2 </ sub> 报道了通过脉冲激光沉积的Si衬底。 WSE的数量 <sub> 2 </ sub> 通过改变激光脉冲的数量来通过透射电子显微镜分析确定层和厚度。生长的WSE高均匀性 <sub> 2 </ sub> 整个SiO上的薄膜 <sub> 2 </ sub> / Si衬底通过拉曼映射估计均匀拉曼峰位置和强度验证。使用传统的光刻工艺,基于生长WSE的场效应晶体管 <sub> 2 </ sub> 制造薄膜,分析它们的电特性。 </ p> </摘要> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" >著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-18063/'>《Advanced materials interfaces》</a> <b style="margin: 0 2px;">|</b><span>2018年第20期</span><b style="margin: 0 2px;">|</b><span>共8页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Seo Sehun&option=202" target="_blank" rel="nofollow">Seo Sehun;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Choi Hojoong&option=202" target="_blank" rel="nofollow">Choi Hojoong;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kim So‐Young&option=202" target="_blank" rel="nofollow">Kim So‐Young;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lee Jongmin&option=202" target="_blank" rel="nofollow">Lee Jongmin;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Kim Kihyeun&option=202" target="_blank" rel="nofollow">Kim Kihyeun;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Yoon Sejun&option=202" target="_blank" rel="nofollow">Yoon Sejun;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lee Byoung Hun&option=202" target="_blank" rel="nofollow">Lee Byoung Hun;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lee Sanghan&option=202" target="_blank" rel="nofollow">Lee Sanghan;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju 61005 Republic of Korea;</p> <p>School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju 61005 Republic of Korea;</p> <p>School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju 61005 Republic of Korea;</p> <p>School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju 61005 Republic of Korea;</p> <p>Department of ChemistryGwangju Institute of Science and TechnologyGwangju 61005 Republic of Korea;</p> <p>School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju 61005 Republic of Korea;</p> <p>School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju 61005 Republic of Korea;</p> <p>School of Materials Science and EngineeringGwangju Institute of Science and TechnologyGwangju 61005 Republic of Korea;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li > <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span><a href="https://www.zhangqiaokeyan.com/clc/6960.html" title="特种结构材料">特种结构材料;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=pulsed laser deposition&option=203" rel="nofollow">pulsed laser deposition;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=thin film&option=203" rel="nofollow">thin film;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=transition metal dichalcogenide&option=203" rel="nofollow">transition metal dichalcogenide;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=tungsten diselenide&option=203" rel="nofollow">tungsten diselenide;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=WSe 2&option=203" rel="nofollow">WSe 2;</a> </p> <div class="translation"> 机译:脉冲激光沉积;薄膜;过渡金属二硫代甲烷;钨蛋白酶;WES 2; </div> </li> </ul> </div> </div> <div class="literature cardcommon"> <div class="similarity "> <h3 class="all_title" id="enpatent66">相似文献</h3> <div class="similaritytab clearfix"> <ul> <li class="active" >外文文献</li> <li >中文文献</li> <li >专利</li> </ul> </div> <div class="similarity_details"> <ul > <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/journal-foreign-detail/0704022435251.html">Tungsten Diselenide: Growth of Centimeter‐Scale Monolayer and Few‐Layer WSe <sub >2</sub>2 Thin Films on SiO <sub >2</sub>2 /Si Substrate via Pulsed Laser Deposition (Adv. 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</b><a class="enjiyixqcontent" href="/academic-journal-cn_journal-sichuan-university-natural-science-edition_thesis/0201266589362.html">非晶态SiO_2过渡层上高C轴取向LiNbO_3薄膜的PLD生长</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=何军辉&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 何军辉</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=朱骏&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,朱骏</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=毛翔宇&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,毛翔宇</a> <span> <a href="/journal-cn-50652/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 四川大学学报:自然科学版 </a> </span> <span> . 2005</span><span>,第0S1期</span> </span> </div> </li> <li> <div> <b>6. </b><a class="enjiyixqcontent" href="/academic-conference-cn_meeting-16850_thesis/020221717287.html">SiO2层上沉积纳米多晶硅薄膜及特性研究</a> <b>[C]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=赵晓锋&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 赵晓锋</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=王天琦&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,王天琦</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=温殿忠&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,温殿忠</a> <span> <a href="/conference-cn-16850/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 中国微米纳米技术学会第十一届学术年会 </a> <span> <span> . 2009</span> </span> </div> </li> <li> <div> <b>7. </b><a class="enjiyixqcontent" href="/academic-degree-domestic_mphd_thesis/020313982337.html">6H-SiC上3C-SiC缓冲层及SiCGe薄膜的生长</a> <b>[A] </b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=李青民&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 李青民</a> <span> . 2008</span> </span> </div> </li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/patent-detail/06120113987195.html">一种利用高温生长SiO2栅介质层的硅纳米柔性薄膜晶体管制备方法</a> <b>[P]</b> . <span> 中国专利: CN114078974A </span> <span> . 2022-02-22</span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/patent-detail/061203170708.html">基于氮化硅应力薄膜与尺度效应的SiN埋绝缘层上晶圆级单轴应变Si的制作方法</a> <b>[P]</b> . <span> 中国专利: CN105938812B </span> <span> . 2019.01.29</span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/patent-detail/06130442335837.html">Method for forming a monolayer film for deposition on a substrate comprises injecting a thin liquid film containing dispersed chemically treated particles over the surface of a rotating drum to form a uniform monolayer of molecules or atoms</a> <b>[P]</b> . <span> 外国专利: <!-- --> IT1320802B1 </span> <span> . 2003-12-10</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译:形成用于沉积在基板上的单层膜的方法包括:在旋转鼓的表面上注入包含分散的经过化学处理的颗粒的液体薄膜,以形成均匀的分子或原子单层 </span> </p> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/patent-detail/06130442336231.html">Method for forming a monolayer film for deposition on a substrate comprises injecting a thin liquid film containing dispersed chemically treated particles over the surface of a rotating drum to form a uniform monolayer of molecules or atoms</a> <b>[P]</b> . <span> 外国专利: <!-- --> IT1320258B1 </span> <span> . 2003-11-26</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译:形成用于沉积在基板上的单层膜的方法包括:在旋转鼓的表面上注入包含分散的经过化学处理的颗粒的液体薄膜,以形成均匀的分子或原子单层 </span> </p> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/patent-detail/06130442335836.html">Method for forming a monolayer film for deposition on a substrate comprises injecting a thin liquid film containing dispersed chemically treated particles over the surface of a rotating drum to form a uniform monolayer of molecules or atoms</a> <b>[P]</b> . <span> 外国专利: <!-- --> IT1320803B1 </span> <span> . 2003-12-10</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译:形成用于沉积在基板上的单层膜的方法包括:在旋转鼓的表面上注入包含分散的经过化学处理的颗粒的液体薄膜,以形成均匀的分子或原子单层 </span> </p> </li> </ul> </div> </div> </div> <div class="theme cardcommon" style="overflow: auto;display:none"> <h3 class="all_title" id="enpatent55">相关主题</h3> <ul id="subject"> </ul> </div> </div> </div> </div> <div class="right rightcon"> <div class="details_img cardcommon clearfix" style="margin-bottom: 10px;display:none;" > </div> </div> </div> <div id="thesis_get_original1" class="downloadBth" style="bottom: 19px;z-index: 999;" onclick="ywcd('0704022434766','4',7,2,1,'',this,24)" 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