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Effect of a Coulomb well in (In, Ga)As/GaAs quantum wells

机译：库仑阱在（在，Ga）AS / GaAs量子孔中的影响

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摘要

Magnetooptical investigation of exciton transitions in high-quality quantum wells of an (In, Ga)As/GaAs heterosystem has been carried out. Investigation of transmission of free-hanging samples detached from the substrate in the magnetic fields of up to 12 T revealed a rich fine structure associated with various heavy-hole and light-hole exciton transitions. In particular, transitions from the excited states of light holes localized in a Coulomb potential produced by an electron along the heterojunction axis (a Coulomb well) have been detected. Taking into account consistently stresses, formation of Landau levels, the binding energies of excitons (diamagnetic excitons), and the effect of a Coulomb well, we have succeeded to describe the experimental results with the use of a self-consistent variational procedure. As a result, new features in the structure of optical transitions have been explained and the effective masses of electrons and holes of excitons formed by both heavy and light holes have been determined with a high accuracy.
机译：已经进行了高质量的量子孔的激子转变的磁光调查，已经进行了（IN，GA）的高质量孔，已经进行了。从磁场中脱离的基板上的自由悬挂样品的透射的调查显示了与各种重孔和光孔激发器过渡相关的富优孔。特别地，已经检测到由沿着沿杂交轴（库仑阱）产生的电子产生的库仑电位中的激发孔的兴奋状态过渡。考虑到始终如一的强调，形成LANDAU水平，激子（抗磁性激子）的结合能，以及库仑阱的效果，我们成功地描述了使用自我一致的分析程序的实验结果。结果，已经解释了光学转变结构中的新特征，并且已经以高精度确定了由重和光孔形成的激子的有效电子和孔。

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