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首页> 外文期刊>ACS applied materials & interfaces >Photovoltaic Device Performance of Single-Walled Carbon Nanotube and Polyaniline Films on n-Si: Device Structure Analysis
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Photovoltaic Device Performance of Single-Walled Carbon Nanotube and Polyaniline Films on n-Si: Device Structure Analysis

机译：n-Si上单壁碳纳米管和聚苯胺薄膜的光伏器件性能：器件结构分析

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摘要

In this paper, we explore the use of two organic materials that have been touted for use as photovoltaic (PV) materials: inherently conducting polymers (ICPs) and carbon nanotubes (CNTs). Due to these materials' attractive features, such as environmental stability and tunable electrical properties, our focus here is to evaluate the use of polyaniline (PANI) and single wall carbon nanotube (SWNT) films in heterojunction diode devices. The devices are characterized by electron microscopy (film morphology), current-voltage characteristics (photovoltaic behavior), and UV/visible/NIR spectroscopy (light absorption). We have found that both PANI and SWNT can be utilized as photovoltaic materials in a simple bilayer configuration with n-type Silicon: n-Si/PANI and n-Si/SWNT. It was our aim to determine how photovoltaic performance was affected utilizing both PANI and SWNT layers in multilayer devices: n-Si/PANI/SWNT and n-Si/SWNT/PANI. The short-circuit current density increased from 4.91 mA/cm~2 (n-Si/PANI) to 12.41 mA/cm~2 (n-Si/PANI/SWNT), while an increase in power conversion efficiency by ～91% was also observed. In the case of n-Si/SWNT/PANI and its corresponding device control (n-Si/SWNT), the short-circuit current density was decreased by an order of magnitude. The characteristics of the device were affected by the architecture and the findings have been attributed to the more effective transport of holes from the PANI to SWNT and less effective transport of holes from PANI to SWNT in the respective multilayer devices.
机译：在本文中，我们探索了被吹捧用作光伏（PV）材料的两种有机材料的使用：固有导电聚合物（ICPs）和碳纳米管（CNTs）。由于这些材料具有吸引人的特性，例如环境稳定性和可调节的电性能，因此我们的重点是评估聚苯胺（PANI）和单壁碳纳米管（SWNT）膜在异质结二极管器件中的使用。这些设备的特征在于电子显微镜（薄膜形态），电流-电压特性（光伏行为）和紫外/可见/近红外光谱（光吸收）。我们已经发现，PANI和SWNT均可在具有n型硅的简单双层配置中用作光伏材料：n-Si / PANI和n-Si / SWNT。我们的目标是确定在多层器件（n-Si / PANI / SWNT和n-Si / SWNT / PANI）中使用PANI和SWNT层如何影响光伏性能。短路电流密度从4.91 mA / cm〜2（n-Si / PANI）增加到12.41 mA / cm〜2（n-Si / PANI / SWNT），而功率转换效率提高了约91％也观察到。在n-Si / SWNT / PANI及其相应的设备控制（n-Si / SWNT）的情况下，短路电流密度降低了一个数量级。器件的特性受体系结构的影响，并且发现归因于在各个多层器件中空穴从PANI到SWNT的更有效传输以及空穴从PANI到SWNT的较不有效传输。

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