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首页> 外文期刊>Crystal growth & design >Quasi-Liquid Layers Can Exist on Polycrystalline Ice Thin Films at a Temperature Significantly Lower than on Ice Single Crystals
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Quasi-Liquid Layers Can Exist on Polycrystalline Ice Thin Films at a Temperature Significantly Lower than on Ice Single Crystals

机译:在多晶冰薄膜上的温度明显低于冰单晶的乙型液体层

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摘要

Surface melting of ice crystals proceeds below the melting point (0 degrees C) and forms thin liquid water layers, called quasi-liquid layers (QLLs), which govern a wide variety of phenomena in nature. Hence, many studies have been performed so far; however, the lowest temperature above which QLLs exist on ice crystal surfaces varied from -90 to -1 degrees C. To reveal the cause of such significant variations, here we show, by laser confocal microscopy combined with Michelson interferometry, the behavior of QLLs on polycrystalline ice thin films that include a large amount of grain boundaries and defects. We found that the QLLs can exist stably on the polycrystalline ice thin films even at -16.2 degrees C (the lowest temperature adopted in this study), although the QLLs on ice single crystals disappear at temperature lower than -2.4 +/- 0.5 degrees C. These results emphasize the importance of grain boundaries and defects for the presence of QLLs. In addition, we also found that critical water vapor pressure above which the QLLs can grow is always higher than the solid-vapor equilibrium curve, indicating that the QLLs are formed in a metastable state by the deposition of supersaturated water vapor.
机译:冰晶的表面熔化在熔点(0℃)以下进行,形成薄的液体水层,称为准液体层(QLL),其在自然界中控制各种各样的现象。因此,到目前为止已经进行了许多研究;然而,高于其冰晶表面上的QLL的最低温度从-90到-1℃变化。为了揭示这种显着变化的原因,在这里,通过激光共聚焦显微镜与迈克森干涉测量学相结合,QLLS的行为多晶冰薄膜,包括大量的晶界和缺陷。我们发现,即使在-16.2摄氏度(本研究中采用的最低温度),QLL也可以稳定地存在于多晶冰薄膜上,尽管冰上单晶上的QLL在低于-2.4 +/- 0.5摄氏度下消失。这些结果强调谷物边界和缺陷在QLL的存在的重要性。此外,我们还发现,上述QLLs可以生长的临界水蒸汽压力总是高于固体蒸汽平衡曲线,表明QLLS通过沉积过饱和水蒸气以亚稳态形成。

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  • 来源
    《Crystal growth & design》 |2019年第1期|共9页
  • 作者单位

    Hokkaido Univ Inst Low Temp Sci Kita Ku N19-W8 Sapporo Hokkaido 0600819 Japan;

    Hokkaido Univ Inst Low Temp Sci Kita Ku N19-W8 Sapporo Hokkaido 0600819 Japan;

    Hokkaido Univ Inst Low Temp Sci Kita Ku N19-W8 Sapporo Hokkaido 0600819 Japan;

    Hokkaido Univ Inst Low Temp Sci Kita Ku N19-W8 Sapporo Hokkaido 0600819 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
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