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首页> 外文期刊>Crystal growth & design >Exchange Bias Effect along Vertical Interfaces in La0.7Sr0.3 MnO3:NiO Vertically Aligned Nanocomposite Thin Films Integrated on Silicon Substrates
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Exchange Bias Effect along Vertical Interfaces in La0.7Sr0.3 MnO3:NiO Vertically Aligned Nanocomposite Thin Films Integrated on Silicon Substrates

机译：沿LA0.7SR0.3 MNO3中垂直界面的交换偏置效应：NIO垂直对准的硅基衬底上集成的纳米复合薄膜

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摘要

Silicon (Si) integration is a critical step toward future applications of multifunctional oxides as nanoscale electronics and spintronic devices, because of the low cost and scalability of silicon substrates. As a demonstration, self-assembled (La0.7Sr0.3MnO3)(x): NiO1-x (LSMO:NiO) vertically aligned nanocomposite (VAN) thin films with exchange bias (EB) properties have been successfully deposited on buffered Si substrates. To enable the epitaxial growth of LSMO:NiO VAN, SrRuO3/TiN was first grown as the buffer layers on Si substrates. The composition of the two-phases has been varied with x = 0.25, 0.5, 0.75, and 1 to explore the electrical transport and magnetic properties of the VAN system on Si. The irreversible temperature T-irr was found to increase with increasing NiO composition, with the highest for (LSMO)(0.25)(NiO)(0.75) of similar to 275 K, when the field was applied in the out-of-plane direction. In addition, the EB effect has been observed for all the nanocomposite films, with the highest H-EB value of 300 O-e for (LSMO)(0.25)(NiO)(0.75). The integration of the VAN system on Si with pronounced EB properties presents a promising approach toward future practical devices using oxide VANs on Si.
机译：硅（Si）集成是朝着未来多功能氧化物作为纳米级电子和旋转式装置的关键步骤，因为硅基板的成本低和可扩展性。作为示范，自组装（LA0.7SR0.3MNO3）（X）：NiO1-X（LSMO：NiO）垂直对齐的纳米复合材料（VAN）薄膜，其具有交换偏压（EB）性质的性质已经成功地沉积在缓冲的Si衬底上。为了使LSMO的外延生长：NiO van，首先将Srruo3 /锡作为Si衬底上的缓冲层生长。两相的组成具有X = 0.25,0.5,0.75和1，以探讨Si上的货车系统的电气传输和磁性。发现不可逆的温度T-IRR随着NIO组合物的增加而增加，当场在面外方向上施加该场时，随着NIO组合物的增加而增加。此外，已针对所有纳米复合膜观察到EB效应，最高的H-EB值为300 O-E（LSMO）（0.25）（NIO）（0.75）。 VAN系统在SI与发音的EB属性的集成在SI上使用氧化面包机展示了未来实用设备的有希望的方法。

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