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Study on the Growth and Mechanism of Zinc Nanostructures on an Ionic Liquid Substrate

机译：锌纳米结构对离子液体基质的生长和机理研究

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摘要

Compared with solid substrates, liquid substrates exhibit isotropic behavior due to the lack of a lattice and because the interaction between liquid substrates and metal atoms is weaker. Therefore, an in-depth understanding about the growth mechanism of metal atoms on liquid substrates is both fundamentally interesting and technically important. Herein, we report the growth of zinc nanocrystals, including hexagonal nanoplates and one-dimensional nanowires, on an ionic liquid substrate without catalyst using thermal deposition method. The average height of terraced steps is similar to 18.6 nm with all steps height larger than 5.7 nm, corresponding to a critical value in determining the growth rate along [001] and [010] direction based on our theoretical calculations. Moreover, one-dimensional Zn nanowires can be also observed. The longest Zn nanowire can grow up to similar to 35.2 mu m. A theoretical model is then proposed to explain the formation of hexagonal zinc nanoplates and nanowires, qualitatively and quantitatively. The interaction force between gas Zn atoms and the as-grown Zn nanostructures along with the preferential growth direction are the main reasons for the formation of nanocrystalline structures. The adsorption energy of a gas Zn atom on multilayer crystal planes is calculated using the ATK program. In addition, the initial structure also affects the dimensions of the structures to some extent.
机译：与固体衬底相比，由于缺少晶格，液体基材表现出各向同性行为，并且因为液体基板和金属原子之间的相互作用较弱。因此，对液体基材上金属原子的生长机制的深入了解是根本性的，技术上重要的是。在此，我们将锌纳米晶体和一维纳米线在离子液体基质上报告锌纳米晶体和一维纳米线的生长，所述离子液体基质不使用热沉积方法而无催化剂。梯形步骤的平均高度与大于5.7nm的所有台阶高度的平均高度相似，对应于基于我们理论计算确定沿着沿着[001]的生长速率和[010]方向的临界值。此外，还可以观察到一维Zn纳米线。最长的Zn纳米线可以长到35.2μm。然后提出理论模型来解释六边形锌纳米层和纳米线的形成，定性和定量。气体Zn原子和生长Zn纳米结构之间的相互作用力以及优先生长方向是形成纳米晶体结构的主要原因。使用ATK程序计算多层晶平面上的气体Zn原子的吸附能量。此外，初始结构也在一定程度上影响结构的尺寸。

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  • 来源
    《Crystal growth & design》 |2020年第2期|共8页
  • 作者

    Wang HaiTao; Wang Peng; Li BaoXing; Mao HongYing;

  • 作者单位

    Hangzhou Normal Univ Dept Phys Hangzhou 311121 Peoples R China;

    Shandong Univ Sci &

    Technol Dept Appl Phys Coll Elect &

    Informat Engn Qingdao 266590 Peoples R China;

    Hangzhou Normal Univ Dept Phys Hangzhou 311121 Peoples R China;

    Hangzhou Normal Univ Dept Phys Hangzhou 311121 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
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