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首页> 外文期刊>Crystal growth & design >Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires
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Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires

机译：INAS / INP / GAASSB核心双壳纳米线的生长和应变弛豫机制

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摘要

The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell nanowires by catalyst-free chemical beam epitaxy on Si(111) substrates. Detailed morphological, structural, and compositional analyses of the nanowires as a function of growth parameters were carried out by scanning and transmission electron microscopy and by energy-dispersive X-ray spectroscopy. Furthermore, by combining the scanning transmission electron microscopy-Moire technique with geometric phase analysis, we studied the residual strain and the relaxation mechanisms in this system. We found that InP shell facets are well-developed along all the crystallographic directions only when the nominal thickness is above 1 nm, suggesting an island-growth mode. Moreover, the crystallographic analysis indicates that both InP and GaAsSb shells grow almost coherently to the InAs core along the < 112 > direction and elastically compressed along the < 110 > direction. For InP shell thickness above 8 nm, some dislocations and roughening occur at the interfaces. This study provides useful general guidelines for the fabrication of high-quality devices based on these core-dual-shell nanowires.
机译：核心/壳壳几何形状和带隙工程的组合可以用来实现具有新型运输和光学性质的系统。在此，我们通过Si（111）衬底上的无催化剂的化学束外延报告InAs / InP / Gaassb核心 - 双壳纳米线的生长。通过扫描和透射电子显微镜和能量分散X射线光谱进行纳米线的详细形态学，结构和组成分析作为生长参数的函数进行。此外，通过将扫描透射电子显微镜-moire技术与几何相分析组合，我们研究了该系统中的残余菌株和弛豫机制。我们发现，只有当标称厚度高于1nm时，才能沿着所有晶形方向开发INP壳面，表明岛增长模式。此外，结晶分析表明，INP和Gaassb壳两者几乎在沿<112的方向沿着<112的方向致其生长并沿<110方向弹性压缩。对于高于8nm以上的InP壳厚度，在界面处发生一些脱臼和粗糙化。本研究提供了基于这些芯双壳纳米线的高质量器件制造的有用的一般指导。

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