首页> 外文期刊>Applied optics >Thermal vulnerability detection in integrated electronic and photonic circuits using infrared thermography
【24h】

Thermal vulnerability detection in integrated electronic and photonic circuits using infrared thermography

机译:红外热成像集成电子和光子电路中的热漏洞检测

获取原文
获取原文并翻译 | 示例
           

摘要

Failure prediction of any electrical/optical component is crucial for estimating its operating life. Using high temperature operating life (HTOL) tests, it is possible to model the failure mechanisms for integrated circuits. Conventional HTOL standards are not suitable for operating life prediction of photonic components owing to their functional dependence on the thermo-optic effect. This work presents an infrared (IR)-assisted thermal vulnerability detection technique suitable for photonic as well as electronic components. By accurately mapping the thermal profile of an integrated circuit under a stress condition, it is possible to precisely locate the heat center for predicting the long-term operational failures within the device under test. For the first time, the reliability testing is extended to a fully functional microwave photonic system using conventional IR thermography. By applying image fusion using affine transformation on multimodal acquisition, it was demonstrated that by comparing the IR profile and GDSII layout, it is possible to accurately locate the heat centers along with spatial information on the type of component. Multiple IR profiles of optical as well as electrical components/circuits were acquired and mapped onto the layout files. In order to ascertain the degree of effectiveness of the proposed technique, IR profiles of complementary metal-oxide semiconductor RF and digital circuits were also analyzed. The presented technique offers a reliable automated identification of heat spots within a circuit/system. (C) 2020 Optical Society of America
机译:任何电/光学元件的故障预测对于估计其使用寿命是至关重要的。使用高温操作寿命(HTOL)测试,可以模拟集成电路的故障机制。传统的HTOL标准不适合于由于它们对热视光效应的功能依赖性的光子分量的使用寿命预测。这项工作介绍了一种适用于光子以及电子元件的红外线(IR)型热漏洞检测技术。通过在应力条件下精确地映射集成电路的热分布,可以精确地定位热中心,以预测被测器件内的长期操作失败。首次,可靠性测试延伸到使用常规IR热成像的全功能微波光子系统。通过对多模式采集的仿射变换应用图像融合,证明了通过比较IR轮廓和GDSII布局,可以精确地定位热中心以及组件类型的空间信息。获取和映射到布局文件的多个光学和电气元件/电路的IR简档。为了确定所提出的技术的有效程度,还分析了互补金属氧化物半导体RF和数字电路的IR轮廓。该技术提供了电路/系统内的热点自动识别。 (c)2020美国光学学会

著录项

  • 来源
    《Applied optics》 |2020年第17期|共10页
  • 作者单位

    Scuola Super Sant Anna Inst Technol Commun Informat &

    Percept Pisa Italy;

    CNR Ist Sci &

    Tecnol Informaz Alessandro Faedo I-56124 Pisa Italy;

    CNR Ist Sci &

    Tecnol Informaz Alessandro Faedo I-56124 Pisa Italy;

    Scuola Super Sant Anna Inst Technol Commun Informat &

    Percept Pisa Italy;

    Scuola Super Sant Anna Inst Technol Commun Informat &

    Percept Pisa Italy;

    CNR Ist Sci &

    Tecnol Informaz Alessandro Faedo I-56124 Pisa Italy;

    Scuola Super Sant Anna Inst Technol Commun Informat &

    Percept Pisa Italy;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用;
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号