Growth and characterization of Sc2O3 doped Ta2O5 thin films

Fazio Mariana; Yang Le; Markosyan Ashot; Bassiri Riccardo; Fejer Martin M.; Menoni Carmen S.

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Growth and characterization of Sc2O3 doped Ta2O5 thin films

机译：SC2O3掺杂Ta2O5薄膜的生长和表征

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We present the optical and structural characterization of films of Ta2O5, Sc2O3, and Sc2O3 doped Ta2O5 with a cation ratio around 0.1 grown by reactive sputtering. The addition of Sc2O3 as a dopant induces the formation of tantalum suboxide due to the "oxygen getter" property of scandium. The presence of tantalum suboxide greatly affects the optical properties of the coating, resulting in higher absorption loss at lambda = 1064 nm. The refractive index and optical band gap of the mixed film do not correspond to those of a mixture of Ta2O5 and Sc2O3, given the profound structural modifications induced by the dopant. (C) 2019 Optical Society of America

机译：我们介绍了Ta2O5，SC2O3和SC2O3掺杂Ta2O5的薄膜的光学和结构表征，阳离子比率约为0.1的反应溅射。由于钪的“氧气吸气剂”，加入SC2O3作为掺杂剂的形成诱导钽二氧化钽。钽二氧化钽的存在极大地影响了涂层的光学性质，导致λ= 1064nm的吸收损失较高。鉴于掺杂剂诱导的深度结构修饰，混合膜的折射率和光学带隙与Ta2O5和SC2O3的混合物相对应。（c）2019年光学学会

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《Applied optics》 |2020年第5期|共6页
作者
Fazio Mariana; Yang Le; Markosyan Ashot; Bassiri Riccardo; Fejer Martin M.; Menoni Carmen S.;
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作者单位

Colorado State Univ Dept Elect &

Comp Engn Ft Collins CO 80523 USA;

Colorado State Univ Dept Chem Ft Collins CO 80523 USA;

Stanford Univ Ginzton Lab Dept Appl Phys Stanford CA 94305 USA;

Stanford Univ Ginzton Lab Dept Appl Phys Stanford CA 94305 USA;

Stanford Univ Ginzton Lab Dept Appl Phys Stanford CA 94305 USA;

Colorado State Univ Dept Elect &

Comp Engn Ft Collins CO 80523 USA;

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Growth and characterization of Sc2O3 doped Ta2O5 thin films

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