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Optimization study of metallic sub-wavelength gratings as the polarizer in infrared wavelengths

机译:金属亚波长光栅作为红外波长偏振器的优化研究

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摘要

Despite the polarimetric detection in the infrared wavelengths of 8-10 mu m being of great importance and broad applications, there has been limited addressing of the grating-based polarizers in this band. One of the main issues lies in the process incompatibility between the conventional nanofabrication technique and the II-VI materials such as HgCdTe, so that the direct integration of polarizers with sensors still remains a big challenge. This paper reports our recent work on optimizing the grating structures, materials, and nanofabrication processes for enhancing both the transmittance and the extinction ratio of polarizers on Si and/or ZnSe wafers, using numerical simulations for the grating design and electron beam lithography for the nanoscale pattern generation. By utilizing the finite-difference time-domain method, both the transmittance and the extinction ratio are maximized by optimizing the grating geometric dimensions and the duty cycle for two different grating materials of Al and Au for comparison. Based on the designed structures, nanofabrications of sub-wavelength gratings in both Al and Au are carried out, and the processes are compared for achieving high polarization performance. Optical characterizations of the fabricated polarizers demonstrate that both high transmittance and extinction ratio can be achieved in feasible parameters and the nano-process developed in this work. (C) 2020 Optical Society of America
机译:尽管在8-10亩的红外波长中具有极高的重要性和广泛应用的红外波长,但是在该频段中的光栅偏振器已经有限地寻址。其中一个主要问题在于传统纳米制作技术与诸如HGCDTE的II-VI材料之间的过程不相容,因此偏振器与传感器的直接集成仍然是一个很大的挑战。本文报告了我们最近的工作,用于优化光栅结构,材料和纳米制备工艺,用于增强Si和/或ZnSe晶片上的偏振器的透射率和消光比,使用用于纳米级的光栅设计和电子束光刻的数值模拟模式生成。通过利用有限差分时域方法,通过优化光栅几何尺寸和Al和Au的两种不同光栅材料的占空比来最大化透射率和消光比。基于设计的结构,进行了Al和Au两者和Au中的亚波长光栅的纳米制作,并将过程进行比较,以实现高偏振性能。制造的偏振器的光学表征表明,在可行的参数和在该工作中开发的纳米工艺中可以实现高透射率和消光比。 (c)2020美国光学学会

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  • 来源
    《Applied optics》 |2020年第5期|共6页
  • 作者单位

    Fudan Univ Sch Informat Sci &

    Engn State Key Lab ASIC &

    Syst Nanolithog &

    Applicat Res Grp Shanghai 200433 Peoples R China;

    Fudan Univ Sch Informat Sci &

    Engn State Key Lab ASIC &

    Syst Nanolithog &

    Applicat Res Grp Shanghai 200433 Peoples R China;

    Fudan Univ Sch Informat Sci &

    Engn State Key Lab ASIC &

    Syst Nanolithog &

    Applicat Res Grp Shanghai 200433 Peoples R China;

    Fudan Univ Sch Informat Sci &

    Engn State Key Lab ASIC &

    Syst Nanolithog &

    Applicat Res Grp Shanghai 200433 Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys Beijing Peoples R China;

    Chinese Acad Sci Changchun Inst Opt Fine Mech &

    Phys Beijing Peoples R China;

    Chinese Acad Sci Shanghai Inst Tech Phys Key Lab Infrared Imaging Mat &

    Detectors 500 Yu Tian Rd Shanghai 200083 Peoples R China;

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  • 正文语种 eng
  • 中图分类 应用;
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