Influence of dry etching on the properties of SiO2 and HfO2 single layers

Xie Lingyun; Liu Huasong; Zhao Jun; Jiao Hongfei; Zhang Jinlong; Wang Zhanshan; Cheng Xinbin

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Influence of dry etching on the properties of SiO2 and HfO2 single layers

机译：干蚀刻对SiO2和HFO2单层性质的影响

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A comparative study was performed to investigate how etching methods and parameters affect the properties of SiO2 and HfO2 coatings. SiO2 and HfO2 single layers were prepared by electron-beam evaporation (EBE), ion-beam assisted deposition (IAD), and ion-beam sputtering (IBS). Then, ion-beam etching (IBE), reactive ion etching (RIE), and inductively coupled plasma etching (ICPE) were used to study the influence of ion bombardment energy and chemical reaction on the etching rates and properties of the prepared SiO2 and HfO2 single layers. For SiO2 coatings, chemical reaction plays a dominant role in determining the etching rates, so ICPE that has the strongest CHF3 plasma shows the highest etching rate. Moreover, all three etching methods have barely any influence on the properties of SiO2 coatings. For HfO2 coatings, the etching rates are more dependent on the ion bombardment energy, although the chemical reaction using CHF3 plasma also helps to increase the etching rates to some extent. To our surprise, the ion bombardment with energy as high as 900 V does not change the amorphous microstructure or crystalline states of prepared HfO2 coatings. However, the high-energy ion bombardment in IBE significantly increases the absorption of the HfO2 coatings prepared by all deposition techniques and decreases their laser damage resistance to different extents. (C) 2019 Optical Society of America

机译：进行比较研究以研究蚀刻方法和参数如何影响SiO 2和HFO2涂层的性质。通过电子束蒸发（EBE），离子束辅助沉积（IAD）和离子束溅射（IBS）制备SiO 2和HFO2单层。然后，使用离子束蚀刻（IBE），反应离子蚀刻（RIE）和电感耦合等离子体蚀刻（ICPE）研究离子轰击能量和化学反应对制备的SiO 2和HFO2的蚀刻速率和性能的影响单层。对于SiO 2涂层，化学反应在确定蚀刻速率时起显性作用，因此具有最强的CHF3等离子体的ICPE显示出最高的蚀刻速率。此外，所有三种蚀刻方法几乎没有对SiO2涂层的性质的影响。对于HFO2涂层，蚀刻速率更依赖于离子轰击能量，尽管使用CHF3等离子体的化学反应也有助于在一定程度上增加蚀刻速率。为了我们的意外，具有高达900 V的能量的离子轰击不会改变制备的HFO2涂层的无定形组织或结晶状态。然而，IBE中的高能量离子轰击显着增加了通过所有沉积技术制备的HFO2涂层的吸收，并降低了它们对不同范围的激光损伤抗性。（c）2019年光学学会

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《Applied optics》 |2020年第5期|共7页
作者
Xie Lingyun; Liu Huasong; Zhao Jun; Jiao Hongfei; Zhang Jinlong; Wang Zhanshan; Cheng Xinbin;
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MOE Key Lab Adv Microstruct Mat Shanghai 200092 Peoples R China;

Tianjin Jinhang Inst Tech Phys Tianjin Key Lab Opt Thin Film Tianjin 300308 Peoples R China;

Chinese Acad Sci Shanghai Inst Appl Phys Shanghai 201204 Peoples R China;

MOE Key Lab Adv Microstruct Mat Shanghai 200092 Peoples R China;

MOE Key Lab Adv Microstruct Mat Shanghai 200092 Peoples R China;

MOE Key Lab Adv Microstruct Mat Shanghai 200092 Peoples R China;

MOE Key Lab Adv Microstruct Mat Shanghai 200092 Peoples R China;

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Influence of dry etching on the properties of SiO2 and HfO2 single layers

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