Characterization of silicon oxynitride films deposited by a high-power impulse magnetron sputtering deposition technique

Liao Bo-Huei; Hsiao Chien-Nan; Shiao Ming-Hua; Chen Sheng-Hui

首页> 外文期刊>Applied optics >Characterization of silicon oxynitride films deposited by a high-power impulse magnetron sputtering deposition technique

【24h】

Characterization of silicon oxynitride films deposited by a high-power impulse magnetron sputtering deposition technique

机译：高功率脉冲磁控溅射沉积技术沉积沉积的氧氮化硅膜的表征

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

In this research, silicon oxynitride films were prepared by high-power impulse magnetron sputtering with 45/955 pulse on/off time. The extinction coefficient was smaller than 1 x 10(-3) from 250 to 700 nm after introducing 2.2 sccm O-2 gas at room temperature. A three-layer of AlF3/SiOxNy AR coating was designed and fabricated on double-sided quartz, and a high transmittance of 99.2% was attained at 248 nm. The silicon oxynitride films deposited at 350 degrees C had the better mechanical and optical properties in the visible range. The hardness of all deposited films was greater than 19 GPa, and the greatest hardness could reach to 29.8 GPa. A film structure of six-layer transparent hard coating/glass/four-layer AR coating was designed and deposited. Its average transmittance was 96.0% in the visible range, while its hardness was 21 GPa and its surface roughness was 0.23 nm. (C) 2020 Optical Society of America

机译：在该研究中，通过高功率脉冲磁控溅射使用45/955脉冲开/关时间来制备氧氮化硅膜。在室温下引入2.2 sccm O-2气体后，消光系数小于250至700nm的1×10（3）。在双面石英上设计并制造了三层ALF3 / SiOxNy Ar涂层，达到99.2％的高透射率为248nm。在350℃下沉积的氧氮化硅膜在可见范围内具有更好的机械和光学性能。所有沉积的薄膜的硬度大于19GPa，最大的硬度可以达到29.8GPa。设计并沉积了六层透明硬涂层/玻璃/四层AR涂层的薄膜结构。可见范围的平均透射率为96.0％，而其硬度为21gPa，其表面粗糙度为0.23nm。（c）2020美国光学学会

著录项

来源
《Applied optics》 |2020年第5期|共5页
作者
Liao Bo-Huei; Hsiao Chien-Nan; Shiao Ming-Hua; Chen Sheng-Hui;
展开▼
作者单位

Taiwan Instrument Res Inst Natl Appl Res Labs Hsinchu 30076 Taiwan;

Taiwan Instrument Res Inst Natl Appl Res Labs Hsinchu 30076 Taiwan;

Taiwan Instrument Res Inst Natl Appl Res Labs Hsinchu 30076 Taiwan;

Natl Cent Univ Dept Opt &

Photon Chungli 320 Taiwan;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类应用;
关键词

Characterization of silicon oxynitride films deposited by a high-power impulse magnetron sputtering deposition technique

摘要

著录项

相关主题

期刊订阅