Design considerations of high-performance InGaAs/InP single-photon avalanche diodes for quantum key distribution

Ma Jian; Bai Bing; Wang Liu-Jun; Tong Cun-Zhu; Jin Ge; Zhang Jun; Pan Jian-Wei

首页> 外文期刊>Applied optics >Design considerations of high-performance InGaAs/InP single-photon avalanche diodes for quantum key distribution

【24h】

Design considerations of high-performance InGaAs/InP single-photon avalanche diodes for quantum key distribution

机译：用于量子密钥分布的高性能IngaAs / InP单光子雪崩二极管的设计考虑因素

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

InGaAs/InP single-photon avalanche diodes (SPADs) are widely used in practical applications requiring near-infrared photon counting such as quantum key distribution (QKD). Photon detection efficiency and dark count rate are the intrinsic parameters of InGaAs/InP SPADs, due to the fact that their performances cannot be improved using different quenching electronics given the same operation conditions. After modeling these parameters and developing a simulation platform for InGaAs/InP SPADs, we investigate the semiconductor structure design and optimization. The parameters of photon detection efficiency and dark count rate highly depend on the variables of absorption layer thickness, multiplication layer thickness, excess bias voltage, and temperature. By evaluating the decoy-state QKD performance, the variables for SPAD design and operation can be globally optimized. Such optimization from the perspective of specific applications can provide an effective approach to design high-performance InGaAs/InP SPADs. (C) 2016 Optical Society of America

机译：IngaAs / InP单光子雪崩二极管（SPAD）广泛用于需要近红外光子计数的实际应用，例如量子密钥分布（QKD）。光子检测效率和暗计数率是InGaAs / InP Spad的内在参数，因为它们的性能不能使用不同的淬火电子器件提供相同的操作条件。在模拟这些参数并开发InGaAs / InP Spad的仿真平台之后，我们研究了半导体结构设计和优化。光子检测效率和暗计数的参数高度取决于吸收层厚度，倍增层厚度，过度偏置电压和温度的变量。通过评估诱饵状态QKD性能，可以全局优化SPAD设计和操作的变量。从特定应用的角度来看，这种优化可以提供设计高性能IngaAs / InP Spad的有效方法。（c）2016年美国光学学会

著录项

来源
《Applied optics》 |2016年第27期|共6页
作者
Ma Jian; Bai Bing; Wang Liu-Jun; Tong Cun-Zhu; Jin Ge; Zhang Jun; Pan Jian-Wei;
展开▼
作者单位

Univ Sci &

Technol China Hefei Natl Lab Phys Sci Microscale Hefei 230026 Anhui Peoples R China;

Univ Sci &

Technol China Hefei Natl Lab Phys Sci Microscale Hefei 230026 Anhui Peoples R China;

Univ Sci &

Technol China Hefei Natl Lab Phys Sci Microscale Hefei 230026 Anhui Peoples R China;

Chinese Acad Sci Changchun Inst Opt Fine Mech &

Phys State Key Lab Luminescence &

Applicat Changchun 130033 Peoples R China;

Univ Sci &

Technol China Hefei Natl Lab Phys Sci Microscale Hefei 230026 Anhui Peoples R China;

Univ Sci &

Technol China Hefei Natl Lab Phys Sci Microscale Hefei 230026 Anhui Peoples R China;

Univ Sci &

Technol China Hefei Natl Lab Phys Sci Microscale Hefei 230026 Anhui Peoples R China;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类应用;
关键词

Design considerations of high-performance InGaAs/InP single-photon avalanche diodes for quantum key distribution

摘要

著录项

相关主题

期刊订阅