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Modeling and experimental investigation of an integrated optical microheater in silicon-on-insulator

机译:绝缘体中硅片集成光学微热器的建模与实验研究

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摘要

A linear piecewise model has been formulated to analyze the performance of a metallic microheater integrated with single-mode waveguides (lambda similar to 1550 nm) in silicon-on-insulator (SOI). The model has been used to evaluate integrated optical microheaters fabricated in a SOI substrate with 2 mu m device layer thickness. The Fabry-Perot modulation technique has been used to extract the effective thermo-optic phase shift and response time. The effective thermal power budget of P-eff,P-pi similar to 500 mu W (out of actually consumed power P-pi = 1.1 mW) for a pi phase shift and a switching time of tau similar to 9 mu s, have been recorded for a typical Ti heater stripe of length L-H = 50 mu m, width W-H = 2 mu m, and thickness t(H) similar to 150 nm, integrated with a Fabry-Perot waveguide cavity of length similar to 20 mm. It has been shown that the performance of a heater improves (in terms of power budget) as the length of a microheater decreases. However, smaller heater size requires higher joule heating to obtain a desired phase shift, which is again found to be dependent on polarization of the guided mode because of thermal stress. (C) 2016 Optical Society of America
机译:已经配制了线性分段模型,以分析金属微热器的性能,其与硅 - 在绝缘体(SOI)中的单模波导(Lambda类似于1550nm)。该模型已被用于评估具有2μm器件层厚度的SOI基板中制造的集成光学微热器。 Fabry-Perot调制技术已被用于提取有效的热光相移和响应时间。 p-eff的有效热功率预算,P-Pi类似于500 mu w(实际消耗的功率p-pi = 1.1 mw)的pi相移和与9 mu s类似的切换时间。记录为长度LH =50μm的典型Ti加热条带,宽度Wh =2μm,以及类似于150nm的厚度t(h),与长度的法布里 - 珀罗波导腔集成,其长度类似于20mm。已经表明,随着微热器的长度降低,加热器的性能提高了(在功率预算方面)。然而,较小的加热器尺寸需要更高的焦耳加热以获得所需的相移,这再次被发现由于热应力而取决于引导模式的偏振。 (c)2016年美国光学学会

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  • 来源
    《Applied optics》 |2016年第11期|共6页
  • 作者单位

    Indian Inst Technol Dept Elect Engn Ctr NEMS &

    Nanophoton Integrated Optoelect Labs Madras 600036 Tamil Nadu India;

    Indian Inst Technol Dept Elect Engn Ctr NEMS &

    Nanophoton Integrated Optoelect Labs Madras 600036 Tamil Nadu India;

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