Effects of substrate temperature on material and photovoltaic properties of magnetron-sputtered Sb2Se3 thin films

Chen Shiming; Hu Xiaobo; Tao Jiahua; Xue Juanjuan; Weng Guoen; Jiang Jinchun; Shen Xiuxu; Chen Shaoqiang

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Effects of substrate temperature on material and photovoltaic properties of magnetron-sputtered Sb2Se3 thin films

机译：基材温度对磁控溅射SB2Se3薄膜材料和光伏性能的影响

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We studied the material and photovoltaic properties of Sb2Se3 thin films fabricated by a magnetron-sputtering method at different substrate temperatures. The films had good crystallinity at substrate temperatures over 300 degrees C. The band-gap energies between 1.1 and 1.5 eV of the films, which were obtained by transmittance measurements, initially decreased and then increased slowly with increasing temperature. Solar cells based on the films with structures of ITO/CdS/Sb2Se3/Au were fabricated, and the substrate temperature had significant effects on the device performance. Low crystal quality at low temperature resulted in a low short-circuit current (J(sc)), while high temperature caused Se deficiency due to evaporation, which decreased the open-circuit voltage (V-oc). The best solar cell performance achieved an efficiency of 0.84% with a V-oc of 0.27 V and J(sc) of 9.47 mA/cm(2) when the substrate temperature was 325 degrees C. (C) 2019 Optical Society of America

机译：我们研究了在不同的基板温度下通过磁控溅射法制造的Sb2Se3薄膜的材料和光伏性能。薄膜在衬底温度下具有超过300℃的良好结晶度。通过透射率测量获得的膜的1.1和1.5eV之间的带间隙能量在最初降低，然后随温度的增加缓慢增加。制造基于具有ITO / Cds / Sb2Se3 / Au结构的薄膜的太阳能电池，并且基材温度对器件性能具有显着影响。低温下的低晶体质量导致低短路电流（J（SC）），而高温导致由于蒸发引起的缺陷，这降低了开路电压（V-OC）。当衬底温度为325℃时，最佳太阳能电池性能为0.84％的效率为9.47mA / cm（2）的0.27 V和J（SC）。（c）2019年美国光学学会

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《Applied optics》 |2019年第11期|共5页
作者
Chen Shiming; Hu Xiaobo; Tao Jiahua; Xue Juanjuan; Weng Guoen; Jiang Jinchun; Shen Xiuxu; Chen Shaoqiang;
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East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

Devices Minist Educ Shanghai 200241 Peoples R China;

East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

Devices Minist Educ Shanghai 200241 Peoples R China;

East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

Devices Minist Educ Shanghai 200241 Peoples R China;

East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

Devices Minist Educ Shanghai 200241 Peoples R China;

East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

Devices Minist Educ Shanghai 200241 Peoples R China;

East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

Devices Minist Educ Shanghai 200241 Peoples R China;

Yantai Laiyang Cent Hosp 111 Changshan Rd Laiyang 265200 Shandong Peoples R China;

East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

Devices Minist Educ Shanghai 200241 Peoples R China;

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Effects of substrate temperature on material and photovoltaic properties of magnetron-sputtered Sb2Se3 thin films

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