Co-optimization method to reduce the pattern distortion caused by polarization aberration in anamorphic EUV lithography

Sheng Naiyuan; Sun Yiyu; Li Enze; Li Tie; Li Yanqiu; Wei Pengzhi; Liu Lihui

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Co-optimization method to reduce the pattern distortion caused by polarization aberration in anamorphic EUV lithography

机译：共同优化方法，以减少变形型EUV光刻偏振像差引起的图案变形

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Extreme ultraviolet lithography is regarded as the most attractive technology to achieve 7 nm node and below. A new high-numerical-aperture anamorphic objective lens is designed to extend the single exposure resolution limit. However, the polarization aberrations (PAs) induced by the multilayer coatings on mirrors cause pattern distortions that cannot be neglected. In this paper, a source, mask, and process parameter co-optimization method is developed to compensate for the pattern distortions caused by PAs and increase the process window (PW). We first present an asymmetric source represented by the superposition of Zernike polynomials to reduce the pattern placement error (PPE). Then, a weighted cost function that incorporates the influences of PAs is innovated. Finally, a gradient-based statistical optimization method is adopted to minimize the cost function by optimizing the lithography system parameters alternately. Simulations at the 7 nm node of the 1D mask pattern indicate that for the system with a PA of marginal field, compared with our earlier work, the critical dimension error and PPE of the proposed method are reduced by 75.0% and 82.4%, respectively, and the PW is increased by 97.4%. (C) 2019 Optical Society of America

机译：极端的紫外线光刻被认为是最具吸引力的技术，以实现7 nm节点和下方。一种新的高数字孔径变形物镜，设计为延长单曝光分辨率极限。然而，由多层涂层诱导的偏振像差（PAS）在镜子上引起图案扭曲不能被忽略。在本文中，开发了一种源，掩码和工艺参数协同优化方法以补偿由PA和增加处理窗口（PW）引起的模式失真。我们首先介绍由Zernike多项式的叠加表示的非对称源，以减少图案放置误差（PPE）。然后，创新了包含PAS影响的加权成本函数。最后，采用基于梯度的统计优化方法来最小化通过交替优化光刻系统参数来最小化成本函数。在1D掩模图案的7 nm节点的模拟表明，对于具有边缘场的PA的系统，与我们之前的工作相比，所提出的方法的临界尺寸误差和PPE分别减少了75.0％和82.4％，并且PW增加了97.4％。（c）2019年光学学会

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《Applied optics》 |2019年第14期|共11页
作者
Sheng Naiyuan; Sun Yiyu; Li Enze; Li Tie; Li Yanqiu; Wei Pengzhi; Liu Lihui;
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作者单位

Minist Educ China Key Lab Photoelect Imaging Technol &

Syst Sch Opt &

Photon Beijing Inst Technol Beijing 100081 Peoples R China;

Minist Educ China Key Lab Photoelect Imaging Technol &

Syst Sch Opt &

Photon Beijing Inst Technol Beijing 100081 Peoples R China;

Minist Educ China Key Lab Photoelect Imaging Technol &

Syst Sch Opt &

Photon Beijing Inst Technol Beijing 100081 Peoples R China;

Minist Educ China Key Lab Photoelect Imaging Technol &

Syst Sch Opt &

Photon Beijing Inst Technol Beijing 100081 Peoples R China;

Minist Educ China Key Lab Photoelect Imaging Technol &

Syst Sch Opt &

Photon Beijing Inst Technol Beijing 100081 Peoples R China;

Minist Educ China Key Lab Photoelect Imaging Technol &

Syst Sch Opt &

Photon Beijing Inst Technol Beijing 100081 Peoples R China;

Minist Educ China Key Lab Photoelect Imaging Technol &

Syst Sch Opt &

Photon Beijing Inst Technol Beijing 100081 Peoples R China;

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Co-optimization method to reduce the pattern distortion caused by polarization aberration in anamorphic EUV lithography

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