Multiple-layer black phosphorus phototransistor with Si microdisk resonator based on whispering gallery modes

Zhang Siqing; Huang Yan; Liu Yan; Shao Yao; Fang Cizhe; Han Genquan; Zhang Jincheng; Hao Yue

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Multiple-layer black phosphorus phototransistor with Si microdisk resonator based on whispering gallery modes

机译：基于耳语画廊模式的Si Microdisk谐振器多层黑色磷光电晶体管

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In this study, we investigate the whispering gallery modes (WGMs) of a 14-layer black phosphorous (BP) phototransistor based on a silicon microdisk. The transmission characteristics of the waveguide-coupled microdisk resonator with and without BP are analyzed to determine the resonance wavelength. The effect of BP on the electric field distributions of the WGMs of the Si microdisk resonator is simulated by using the finite-element method. In addition, the enhanced optical absorption of the BP-covered Si microdisk resonator is further analyzed by the coupled mode theory. Contrastingly, the device also functions as a phototransistor with a peak responsivity of 328.1 A/W and high field-effect mobility of nearly 466.6 cm(2) V-1 s(-1). Our proposed device paves the path for the exploitation of BP optoelectronics devices with the assistance of optical microresonators in the near-infrared range (NIR). (C) 2019 Optical Society of America

机译：在本研究中，我们研究了基于硅片微量磁盘的14层黑色磷（BP）光电晶体管的潜言画廊模式（WGM）。分析了具有和不具有BP的波导耦合的微仪谐振器的传输特性以确定谐振波长。通过使用有限元方法模拟BP对SI微仪谐振器的WGM的电场分布的影响。另外，通过耦合模式理论进一步分析了增强BP覆盖的SI微仪谐振器的光学吸收。比较地，该装置还用作光电晶体管，峰值响应度为328.1a / w和近466.6cm（2）V-1s（-1）的高场效应迁移率。我们所提出的装置铺设了在近红外范围（NIR）中的光学微谐振器的帮助下开发BP光电子器件的路径。（c）2019年光学学会

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《Applied optics》 |2019年第16期|共6页
作者
Zhang Siqing; Huang Yan; Liu Yan; Shao Yao; Fang Cizhe; Han Genquan; Zhang Jincheng; Hao Yue;
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Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

China Elect Power Res Inst State Key Lab Power Grid Secur &

Energy Conservat Beijing 100192 Peoples R China;

Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

Xidian Univ Sch Microelect Wide Bandgap Semicond Technol Disciplines State K Xian 710071 Shaanxi Peoples R China;

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Multiple-layer black phosphorus phototransistor with Si microdisk resonator based on whispering gallery modes

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