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Three-dimensional thermal model of high-power semiconductor lasers

机译:高功率半导体激光器的三维热模型

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摘要

In this paper, 3-D, steady-state, analytical thermal models of high-power single-emitter semiconductor lasers (SEs) and laser diode arrays (LDAs) are derived, considering the heat conduction in multi-layered laser structures. Heat flow in the laser chips for an epi-down bonded SE and LDA is described using this model, and it is observed that the laser chips contribute to 8% and 6% of total heat dissipation for the SE and LDA, respectively. The submount size requirement for this model is discussed by revealing the heat flow in the submount. Through finite element simulations, the solution accuracy for the lasers with non-ideal submounts is confirmed. Finally, the performance of our proposed analytical models is verified by finite element simulations and experimental measurements based on the wavelength shift method. (C) 2019 Optical Society of America
机译:在本文中,考虑多层激光结构中的导热导热,推导了3-D,稳态,分析热模型和激光二极管阵列(LDA)和激光二极管阵列(LDA)。 使用该模型描述了对外延键合SE和LDA的激光芯片中的热流,观察到激光芯片分别有助于SE和LDA的总散热的8%和6%。 通过揭示基座中的热流来讨论此模型的提交尺寸要求。 通过有限元模拟,确认了具有非理想子地区的激光器的溶液精度。 最后,通过有限元模拟和基于波长换档方法的实验测量来验证我们所提出的分析模型的性能。 (c)2019年光学学会

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  • 来源
    《Applied optics》 |2019年第14期|共10页
  • 作者单位

    Chinese Acad Sci Xian Inst Opt &

    Precis Mech State Key Lab Transient Opt &

    Photon 17 Xinxi Rd Xian 710119 Shaanxi Peoples R China;

    Focuslight Technol Inc 56 Zhangba 6th Rd Xian 710077 Shaanxi Peoples R China;

    Focuslight Technol Inc 56 Zhangba 6th Rd Xian 710077 Shaanxi Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
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