Effects of multiplication layers on dark current components of InGaAs/InP avalanche photodiodes

Liu Aofei; Zhang Junqin; Xing Hailong; Yang Yintang

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Effects of multiplication layers on dark current components of InGaAs/InP avalanche photodiodes

机译：乘法层对IngaAs / InP雪崩光电二极管暗电流分量的影响

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Based on results from the Silvaco Atlas device simulation software, a separate absorption grading charge multiplication InGaAs/InP avalanche photodiode has been modeled. The Shockley-Read--Hall current, avalanche amplification current, trap-assisted tunneling current, and band-to-band direct tunneling current are combined and considered as the dark current. Individual components of the dark current have been obtained separately through numerical simulation. Due to the multiplication effect, the influence of the multiplication layer on the dark current components has been studied. The simulation results are analyzed based on semiconductor physics knowledge. The conclusions presented provide some theoretical guidance for the optimum design of avalanche photodiodes. (C) 2019 Optical Society of America

机译：基于Silvaco Atlas设备仿真软件的结果，模拟了单独的吸收分级电荷乘法IngaAs / InP雪崩光电二极管。震撼读厅电流，雪崩放大电流，陷阱辅助隧道电流和带带直接隧道电流合并，并被认为是暗电流。通过数值模拟分别获得了暗电流的各个组分。由于倍增效果，研究了乘法层对暗电流分量的影响。基于半导体物理知识分析模拟结果。提出的结论提供了雪崩光电二极管的最佳设计提供了一些理论指导。（c）2019年光学学会

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《Applied optics》 |2019年第19期|共8页
作者
Liu Aofei; Zhang Junqin; Xing Hailong; Yang Yintang;
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Xidian Univ Sch Microelect Key Lab Minist Educ Wide Band Gap Semicond Mat &

Xian 710071 Shaanxi Peoples R China;

Xidian Univ Sch Microelect Key Lab Minist Educ Wide Band Gap Semicond Mat &

Xian 710071 Shaanxi Peoples R China;

Xidian Univ Sch Microelect Key Lab Minist Educ Wide Band Gap Semicond Mat &

Xian 710071 Shaanxi Peoples R China;

Xidian Univ Sch Microelect Key Lab Minist Educ Wide Band Gap Semicond Mat &

Xian 710071 Shaanxi Peoples R China;

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Effects of multiplication layers on dark current components of InGaAs/InP avalanche photodiodes

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