Two-dimensional (2D) materials have realized significant new applications in photonics, electronics, and optoelectronics. Among these materials is tungsten disulphide (WS2), which is a 2D material that shows excellent optoelectronic properties, tunable/sizable bandgap in the visible range, and good absorption. A polycrystalline WS2 thin film is successfully deposited on a substrate using radio frequency magnetron sputtering at room temperature. The x-ray diffraction pattern reveals two hexagonal structured peaks along the (100) and (110) planes. Energy-dispersive x-ray spectroscopy reveals a non-stoichiometric WS2 film with 1.25 ratio of S/W for a 156.3 nm thick film, while Raman shifts are observed at the E-2g(1) and A(1g) phonon modes located at 350.70 cm(-1) and 415.60 cm(-1), respectively. A sandwiched heterojunction photodetector device is successfully fabricated and illuminated within the violet range at 441 nm and 10 V of bias voltage. The maximum photocurrent values are calculated as 0.95 mu A, while the responsivity is observed at 169.3 mA W-1 and detectivity 1.48 x 10(8) Jones at illuminated power of 0.6124 mu m. These results highlight the adaptability of the present technique for large-scale applications as well as the flexibility to promote development of advanced optoelectronic devices. (C) 2019 Optical Society of America
展开▼
机译：二维（2D）材料在光子，电子和光电子中实现了显着的新应用。在这些材料中是钨钨（WS2），其是2D材料，其显示出优异的光电性质，可视范围的可调谐/均匀的带隙，以及良好的吸收。在室温下使用射频磁控溅射成功地沉积多晶WS2薄膜。 X射线衍射图案显示沿（100）和（110）平面的两个六边形结构峰。能量分散X射线光谱扫描X射线光谱揭示了156.3nm厚膜的1.25个比率的非化学计量WS2膜，而在E-2G（1）和位于350.70 cm（-1）和415.60厘米（-1）。夹带的异质结法光电探测器装置在441nm和10V的偏置电压下成功制造和照亮。最大光电流值计算为0.95μm，而在169.3 mA W-1和探测器中观察到响应度，探测器1.48 x 10（8）琼斯，在照明功率为0.6124 mu m。这些结果突出了本技术对大型应用的适应性以及促进先进光电器件的发展的灵活性。 （c）2019年光学学会
展开▼
