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Silicon nitride/titanium oxide hybrid waveguide design enabling broadband athermal operation

机译:氮化硅/氧化钛杂交波导设计,使宽带动脉作用能够

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摘要

This paper presents a special design of a new kind of silicon nitride/titanium oxide hybrid waveguide with multi-layer materials laminate structure aiming at broadband athermal operation. By incorporating three layers of titanium oxide whose thermo-optic coefficient (TOC) is negative in the waveguide core and upper cladding regions, the thermal drift of the conventional strip waveguide induced by the positive TOC of silicon nitride is fully compensated, with the effective TOC of the hybrid waveguide achieving zero at 1550 nm and only varying extremely slightly within +/- 6 x 10(-7)/K in the wavelength band from 1350 to 1850 nm. In addition, due to the inherent alternate growth manner of titanium dioxide and silicon nitride thin layers, this new kind of multi-layer material laminate structure waveguide holds the potential of avoiding the challenging growth of low-stress crack-free single-layer silicon nitride film thick enough for realizing an anomalous dispersion waveguide. Furthermore, we numerically demonstrate the different influences of the temperature change on optical frequency comb generation between the traditional waveguide and the hybrid waveguide, and we find that the athermal hybrid waveguide is much more temperature insensitive than the strip waveguide. (C) 2019 Optical Society of America
机译:本文介绍了一种具有多层材料层压结构的新种类的氮化硅/氧化钛混合波导的特殊设计,其针对宽带动力操作。通过掺入三层氧化钛,其热视光系数(TOC)在波导芯和上包层区域中是负的,通过氮化硅正为氮化硅的正ToC诱导的传统条带波导的热漂移得到完全补偿,有效TOC在1550nm处实现零的混合波导,并且在波长带中的+/- 6×10(-7)/ k内仅在1350至1850nm的+/- 6×10(-7)/ k内。另外,由于本质的二氧化钛和氮化硅薄层的固有的替代生长方式,这种新种类的多层材料层压结构波导具有避免不稳健的低应力裂缝单层氮化硅生长的可能性薄膜足够厚,用于实现异常的分散波导。此外,我们在数值上证明了传统波导和混合波导之间的光学频率梳状的温度变化的不同影响,并且发现滴建液混合波导比带状波导更温差。 (c)2019年光学学会

著录项

  • 来源
    《Applied optics》 |2019年第19期|共6页
  • 作者

    Ma Jianbin; Sun Yu; Chen Shaowu;

  • 作者单位

    Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China;

    Beijing Forestry Univ Sch Informat Sci &

    Technol Beijing 100083 Peoples R China;

    Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China;

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  • 正文语种 eng
  • 中图分类 应用;
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