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High-power sampled-grating-based master oscillator power amplifier system with 23.5 nm wavelength tuning around 970 nm

机译:基于高功率采样光栅的主振荡器功率放大器系统,具有23.5 nm波长调谐约970 nm

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摘要

Tunable high-power diode lasers are key components in various established and emerging applications. In this work, we present a compact hybrid master oscillator power amplifier (MOPA) laser system. The system utilizes a tunable GaAs-based sampled-grating (SG) distributed Bragg reflector (DBR) laser as the master oscillator (MO), which emits around a wavelength of 970 nm in a single longitudinal mode with a spectral width below 20 pm. The SG-DBR laser consists of two SGs, each of which can be thermally tuned with microheaters. By tuning one of the two SGs, a discrete wavelength tuning of 21.1 nm can be obtained with a Vernier mode spacing of about 2.3 nm. By tuning both SGs, 23.5 nm of quasi-continuous tuning is obtained, with a mode spacing of about 115 pm. The coupling of the beam emitted by the MO into a tapered power amplifier provides an amplified output power in the watt range having a nearly diffraction-limited beam with a propagation factor of M-1/e2(2) = 1.6. The combination of high power and wide wavelength tuning in a compact system makes this light source ideal for, among other things, nonlinear frequency conversion. (C) 2018 Optical Society of America
机译:可调高功率二极管激光器是各种建立和新兴应用中的关键组件。在这项工作中,我们提供了一种紧凑的混合主振荡器功率放大器(MOPA)激光系统。该系统利用基于GAAS的采样光​​栅(SG)分布式布拉格反射器(DBR)激光器作为主振荡器(MO),其在单个纵向模式中围绕970nm的波长发射,其光谱宽度低于20μm。 SG-DBR激光器由两个SG组成,每个SGS可以用微热器热调谐。通过调谐两个SGS中的一个,可以通过约2.3nm的游标模式间隔获得21.1nm的离散波长调谐。通过调整SGS,获得23.5nm的准连续调谐,具有约115μm的模式间距。由Mo发射到锥形功率放大器的光束的耦合在瓦特范围内提供了具有几乎衍射限制的梁的扩增输出功率,其传播系数为M-1 / E2(2)= 1.6。在紧凑型系统中的高功率和宽波长调谐的组合使得这种光源是非线性频率转换的理想选择。 (c)2018年光学学会

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  • 来源
    《Applied optics》 |2018年第29期|共6页
  • 作者单位

    Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

    Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

    Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

    Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

    Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

    Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

    Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

    Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

    Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

    Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

    Leibniz Inst Hochstfrequenztech Ferdinand Braun Inst Gustav Kirchhoff Str 4 D-12489 Berlin Germany;

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