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Design of a graphene-based dual-slot hybrid plasmonic electro-absorption modulator with high-modulation efficiency and broad optical bandwidth for on-chip communication

机译:基于石墨烯的双槽混合等离子体电吸收器设计,具有高调制效率和广光学带宽,用于片上通信

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摘要

The hybrid plasmonic effect with lower loss and comparable light confinement than surface plasmon polariton opens new avenues for strengthening light-matter interactions with low loss. Here, we propose and numerically analyze a graphene-based electro-absorption modulator (EAM) with high-modulation efficiency and broad optical bandwidth using a dual-slot hybrid plasmonic waveguide (HPW), which consists of a central dual-slot HPW connected with two taper transitions and two additional dual-slot HPWs for coupling it with the input and output silicon nanowires, where graphene layers are located at the bottom and top side of the whole dual-slot HPW region. By combining the huge light enhancement effect of the dual-slot HPW and graphene's tunable conductivity, we obtain a high-modulation efficiency (ME) of 1.76 dB/mu m for the graphene-based dual-slot HPW (higher ME of 2.19 dB/mu m can also be obtained). Based upon this promising result, we further design a graphene-based hybrid plasmonic EAM, achieving a modulation depth (MD) of 15.95 dB and insertion loss of 1.89 dB @1.55 mu m, respectively, in a total length of only 10 mu m, where its bandwidth can reach over 500 nm for keeping MD 15 dB; MD can also be improved by slightly increasing the device length or shrinking the waveguide thickness, showing strong advantages for applying it into on-chip high-performance silicon modulators. (C) 2018 Optical Society of America
机译:杂交等离子体效应低于表面等离子体Polariton的较低损失和相当的光限制,用于加强与低损耗的浅损失相互作用的新途径。在这里,我们提出并使用双槽混合等离子体波导(HPW)在数值分析了具有高调制效率和宽光学带宽的石墨烯基电吸收调制器(EAM),这由连接的中央双插槽HPW组成两个锥度转换和两个用于与输入和输出硅纳米线耦合的另外两个额外的双槽HPW,其中石墨烯层位于整个双槽HPW区域的底部和顶侧。通过组合双槽HPW和石墨烯的可调谐电导率的巨大光增强效应,我们为石墨烯的双槽HPW获得了1.76 dB / mu m的高调制效率(ME)(更高的ME为2.19 dB / MU M也可以获得)。基于这一有前途的结果,我们进一步设计了基于石墨烯的混合等离子体射,实现了15.95dB的调制深度(MD),分别为1.89 dB的插入损耗,总长度仅为10亩,它带宽可以达到超过500nm的,用于保持md& 15 dB;通过略微增加器件长度或缩小波导厚度,也可以改善MD,显示出施加到片上高性能硅调制器的强大优点。 (c)2018年光学学会

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  • 来源
    《Applied optics》 |2018年第12期|共8页
  • 作者

    Wu Zhongwei; Xu Yin;

  • 作者单位

    Southeast Univ Sch Elect Sci &

    Engn Natl Res Ctr Opt Sensing Commun Integrated Networ Nanjing 210096 Jiangsu Peoples R China;

    Southeast Univ Sch Elect Sci &

    Engn Natl Res Ctr Opt Sensing Commun Integrated Networ Nanjing 210096 Jiangsu Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用;
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