Fabrication of cerium-doped beta-Ga2O3 epitaxial thin films and deep ultraviolet photodetectors

Li Wenhao; Zhao Xiaolong; Zhi Yusong; Zhang Xuhui; Chen Zhengwei; Chu Xulong; Yang Hujiang; Wu Zhenping; Tang Weihua

首页> 外文期刊>Applied optics >Fabrication of cerium-doped beta-Ga2O3 epitaxial thin films and deep ultraviolet photodetectors

【24h】

Fabrication of cerium-doped beta-Ga2O3 epitaxial thin films and deep ultraviolet photodetectors

机译：铈掺杂β-Ga2O3外延薄膜和深紫外光探测器的制备

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

High-quality cerium-doped beta-Ga2O3 (Ga2O3:Ce) thin films could be achieved on (0001)alpha-Al2O3 substrates using a pulsed-laser deposition method. The impact of dopant contents concentration on crystal structure, optical absorption, photoluminescence, and photoelectric properties has been intensively studied. X-ray diffraction analysis results have shown that Ga2O3:Ce films are highly ((2) over bar 01) oriented, and the lattice spacing of the ((4) over bar 02) planes is sensitive to the Ce doping level. The prepared Ga2O3:Ce films show a sharp absorption edge at about 250 nm, meaning a high transparency to deep ultraviolet (DUV) light. The photoluminescence results revealed that the emissions were in the violet-blue-green region, which are associated with the donor-acceptor transitions with the Ce3+ and oxygen vacancies related defects. A simple DUV photodetector device with a metal-semiconductor-metal structure has also been fabricated based on Ga2O3:Ce thin film. A distinct DUV photoresponse was obtained, suggesting a potential application in DUV photodetector devices. (C) 2018 Optical Society of America

机译：使用脉冲激光沉积方法可以在（0001）α-Al2O3基板上实现高质量的铈掺杂β-Ga2O3（Ga2O3：Ce）薄膜。掺杂剂含量浓度对晶体结构，光学吸收，光致发光和光电性能的影响已经深入研究。 X射线衍射分析结果表明，Ga2O3：Ce膜高度（（2）上方的杆01），并且（（4）上的晶片02）平面的晶格间距对Ce掺杂水平敏感。制备的Ga2O3：Ce膜在约250nm处显示出急剧吸收边缘，这意味着深紫外（DUV）光的高透明度。光致发光结果表明，排放在紫蓝绿色区域中，与供体 - 受体过渡与CE3 +和氧空缺相关的缺陷相关。还通过Ga2O3：Ce薄膜制造具有金属半导体 - 金属结构的简单DUV光电探测器装置。获得了不同的DUV光响应，表明DUV光电探测器设备中的潜在应用。（c）2018年光学学会

著录项

来源
《Applied optics》 |2018年第3期|共6页
作者
Li Wenhao; Zhao Xiaolong; Zhi Yusong; Zhang Xuhui; Chen Zhengwei; Chu Xulong; Yang Hujiang; Wu Zhenping; Tang Weihua;
展开▼
作者单位

Beijing Univ Posts &

Telecommun Sch Sci Lab Optoelect Mat &

Devices Beijing 100876 Peoples R China;

Beijing Univ Posts &

Telecommun Sch Sci Lab Optoelect Mat &

Devices Beijing 100876 Peoples R China;

Beijing Univ Posts &

Telecommun Sch Sci Lab Optoelect Mat &

Devices Beijing 100876 Peoples R China;

China Aerosp Acad Syst Sci &

Engn Beijing 100037 Peoples R China;

Beijing Univ Posts &

Telecommun Sch Sci Lab Optoelect Mat &

Devices Beijing 100876 Peoples R China;

China Aerosp Acad Syst Sci &

Engn Beijing 100037 Peoples R China;

Beijing Univ Posts &

Telecommun Sch Sci Lab Optoelect Mat &

Devices Beijing 100876 Peoples R China;

Beijing Univ Posts &

Telecommun Sch Sci Lab Optoelect Mat &

Devices Beijing 100876 Peoples R China;

Beijing Univ Posts &

Telecommun Sch Sci Lab Optoelect Mat &

Devices Beijing 100876 Peoples R China;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类应用;
关键词

Fabrication of cerium-doped beta-Ga2O3 epitaxial thin films and deep ultraviolet photodetectors

摘要

著录项

相关主题

期刊订阅