Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips

Han Dan; Ma Shufang; Jia Zhigang; Liu Peizhi; Jia Wei; Shang Lin; Zhai Guangmei; Xu Bingshe

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Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips

机译：InGaN / GaN微方形阵列发光二极管芯片的形态学和光学和电性能

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InGaN/GaN micro-square array light-emitting diode (LED) chips (micro-chips) have been prepared via the focused ion beam (FIB) etching technique, which can not only reduce ohmic contact degradation but also control the aspect ratio precisely in three-dimensional (3D) structure LED (3D-LED) device fabrication. The effects of FIB beam current and micro-square array depth on morphologies and optical and electrical properties of the micro-chips have been studied. Our results show that sidewall surface morphology and optical and electrical properties of the micro-chips degrade with increased beam current. After potassium hydroxide etching with different times, an optimal current-voltage and luminescence performance can be obtained. Combining the results of cathodoluminescence mappings and light output-current characteristics, the light extraction efficiency of the micro-chips is reduced as FIB etch depth increases. The mechanisms of micro-square depth on light extraction have been revealed by 3D finite difference time domain. (C) 2018 Optical Society of America

机译：IngaN / GaN微方形阵列发光二极管（LED）芯片（微芯片）通过聚焦离子束（FIB）蚀刻技术制备，该技术不仅可以减少欧姆接触降级，而且精确地控制纵横比三维（3D）结构LED（3D-LED）设备制造。已经研究了FIB梁电流和微方阵列深度对微芯片的形态和光学和电性能的影响。我们的结果表明，微芯片的侧壁表面形态和光学和电性能随着梁电流的增加而降解。用不同时间氢氧化钾蚀刻后，可以获得最佳的电流 - 电压和发光性能。结合阴极发光映射和光输出电流特性的结果，随着FIB蚀刻深度的增加，微芯片的光提取效率降低。通过3D有限差分时域揭示了微方深度对光提取的机制。（c）2018年光学学会

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来源
《Applied optics》 |2018年第11期|共6页
作者
Han Dan; Ma Shufang; Jia Zhigang; Liu Peizhi; Jia Wei; Shang Lin; Zhai Guangmei; Xu Bingshe;
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作者单位

Taiyuan Univ Technol Minist Educ Key Lab Interface Sci &

Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

Shaanxi Univ Sci &

Technol Inst Atom &

Mol Sci Xian 710021 Shaanxi Peoples R China;

Taiyuan Univ Technol Minist Educ Key Lab Interface Sci &

Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

Taiyuan Univ Technol Minist Educ Key Lab Interface Sci &

Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

Taiyuan Univ Technol Minist Educ Key Lab Interface Sci &

Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

Shaanxi Univ Sci &

Technol Inst Atom &

Mol Sci Xian 710021 Shaanxi Peoples R China;

Taiyuan Univ Technol Minist Educ Key Lab Interface Sci &

Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

Taiyuan Univ Technol Minist Educ Key Lab Interface Sci &

Engn Adv Mat Taiyuan 030024 Shanxi Peoples R China;

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Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips

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