Study on the inversion of doped concentration induced by millisecond pulsed laser irradiation silicon-based avalanche photodiode

Yuan Dong; Di Wang; Zhi Wei; Ran Fu Tai

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Study on the inversion of doped concentration induced by millisecond pulsed laser irradiation silicon-based avalanche photodiode

机译：毫秒脉冲激光照射硅基雪崩光电二极管诱导掺杂浓度的转化研究

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In this paper, an experimental study of silicon-based avalanche photodiode (Si-APD) with millisecond pulse laser irradiation was carried out, and the C-V curve of Si-APD was obtained by using a semiconductor analyzer. Based on the single-side abrupt junction character of n+p, combined with the corresponding theoretical derivation, the doping concentration varying with the axial depth of damaged Si-APD was obtained by inverse computation. The lattice dislocation and junction reduction were the fundamental causes of the reduced doping concentration. The research results provide a new method for the study of the internal doping concentration for detectors with millisecond pulse laser damage. (C) 2018 Optical Society of America

机译：在本文中，进行了用毫秒脉冲激光照射的硅基雪崩光电二极管（Si-APD）的实验研究，通过使用半导体分析仪获得Si-APD的C-V曲线。基于N + P的单侧突变结合，结合了相应的理论衍生，通过逆计算获得了随着损坏的Si-APD轴向深度而变化的掺杂浓度。晶格脱位和结减少是减少掺杂浓度的根本原因。研究结果提供了一种新的方法，用于研究具有毫秒脉冲激光损伤的探测器内部掺杂浓度。（c）2018年光学学会

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《Applied optics》 |2018年第5期|共5页
作者
Yuan Dong; Di Wang; Zhi Wei; Ran Fu Tai;
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作者单位

Tsinghua Univ Key Lab Thermal Sci &

Power Engn Beijing Key Lab Utilizat &

Reduct Technol CO2 Dept Energy &

Power Engn Minist Educ Beijing 100084 Peoples R China;

Changchun Univ Sci &

Technol Coll Sci Changchun 130022 Jilin Peoples R China;

Changchun Univ Sci &

Technol Coll Sci Changchun 130022 Jilin Peoples R China;

Tsinghua Univ Key Lab Thermal Sci &

Power Engn Beijing Key Lab Utilizat &

Reduct Technol CO2 Dept Energy &

Power Engn Minist Educ Beijing 100084 Peoples R China;

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Study on the inversion of doped concentration induced by millisecond pulsed laser irradiation silicon-based avalanche photodiode

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