Experiment on the temporal evolution characteristics of a CCD multilayer structure irradiated by a 1.06 mu m continuous laser

Han Min; Nie Jinsong; Sun Ke; Wang Xi; Dou Xianan

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Experiment on the temporal evolution characteristics of a CCD multilayer structure irradiated by a 1.06 mu m continuous laser

机译：1.06 mu M连续激光照射CCD多层结构的时间演化特性的实验

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In this study, an experiment of a CCD detector irradiated by a 1.06 mu m continuous laser is established. Factors including the microlens focusing beam, microlens carbonization at high temperature, shading aluminum film opening rate, low shading aluminum film absorption rate, and different materials' absorption to the laser are comprehensively considered. By combining the irradiation time, the output image of the CCD detector, surface morphology of the damage area, the optical micrograph, and regional energy spectrogram, the damage mechanism of the CCD is explored. In addition, the threshold time and the damage morphology of the multilayer structure of the CCD detector are investigated. The results show that when the irradiation time increases, the damage starts from the microlens due to melting, which is represented as point damage. Subsequently, the aluminum film melts and is separated from the SiO2 by stress and melting damage, causing vertical bright linear damage. Without the protection of the shading aluminum film, the silicon electrode heats up and reaches the melting point, causing damage to the wiring circuit, which is represented as horizontal dark linear damage. Eventually, the N-Si layer in the silicon substrate melts and the clock signal is destroyed, which means that the optical signal is not converted into an electrical signal. The CCD detector gets completely damaged. (C) 2018 Optical Society of America

机译：在该研究中，建立了由1.06μm连续激光照射的CCD检测器的实验。全面地考虑了包括微透镜聚焦光束，高温，遮蔽铝膜开启速率，低遮阳铝膜吸收率和不同材料对激光器的焊接铝膜开口速率和不同材料的因素。通过组合照射时间，CCD检测器的输出图像，损伤区域的表面形貌，光学显微照片和区域能谱图，CCD的损坏机制被探讨。另外，研究了CCD检测器的多层结构的阈值时间和损伤形态。结果表明，当照射时间增加时，由于熔化，损坏从微透镜开始，这表示为点损坏。随后，通过应力和熔化损坏，铝膜熔化并与SiO 2分离，导致垂直亮的线性损伤。在不保护遮阳铝膜的情况下，硅电极加热并达到熔点，对布线电路造成损坏，该电路被表示为水平暗线性损坏。最终，硅衬底熔体中的N-Si层熔化并且时钟信号被破坏，这意味着光信号未被转换成电信号。 CCD检测器完全损坏。（c）2018年光学学会

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《Applied optics》 |2018年第16期|共6页
作者
Han Min; Nie Jinsong; Sun Ke; Wang Xi; Dou Xianan;
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Natl Univ Def Technol State Key Lab Pulse Power Laser Technol Hefei 230037 Anhui Peoples R China;

Natl Univ Def Technol State Key Lab Pulse Power Laser Technol Hefei 230037 Anhui Peoples R China;

Natl Univ Def Technol State Key Lab Pulse Power Laser Technol Hefei 230037 Anhui Peoples R China;

Natl Univ Def Technol State Key Lab Pulse Power Laser Technol Hefei 230037 Anhui Peoples R China;

Natl Univ Def Technol State Key Lab Pulse Power Laser Technol Hefei 230037 Anhui Peoples R China;

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Experiment on the temporal evolution characteristics of a CCD multilayer structure irradiated by a 1.06 mu m continuous laser

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