Experimental validation of nonlinearity suppression for an inverse-layer-type silicon photodiode and its prediction based on theoretical modeling

Tanabe Minoru; Zama Tatsuya; Shitomi Hiroshi

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Experimental validation of nonlinearity suppression for an inverse-layer-type silicon photodiode and its prediction based on theoretical modeling

机译：基于理论建模的逆层型硅光电二极管的非线性抑制的实验验证及其预测

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The spectral nonlinearity of an inverse-layer-type silicon (Si) photodiode (PD) in the visible region was investigated. As expected by theoretical calculation, supralinearity and saturation of the Si PD, which are key factors of nonlinearity, were suppressed by applying a reverse voltage above 30 V. Experimentally observed nonlinear behavior depending on the reverse bias was compared to a theoretical model describing supralinearity, including the inner parameters of the Si PD, and these comparison results were in agreement. This theoretical model enables us to quantitatively predict the behavior of the supralinearity of the inverse-layer-type Si PD in various reverse bias conditions. Accurate experimental nonlinearity supported by theoretical predictions will contribute to high-accuracy optical measurement with the Si PD over a wide range of optical power levels and various reverse-bias voltages. (C) 2017 Optical Society of America

机译：研究了可见区域中的逆层型硅（Si）光电二极管（Pd）的光谱非线性。正如通过施加高于30 V上方的反向电压，抑制了抑制了逆转电压的理论计算的理论计算，Si Pd的Supraline和饱和度，这是根据逆偏压的实验观察到的非线性行为，与描述Supralinality的理论模型进行了比较。包括SI PD的内部参数，这些比较结果一致。该理论模型使我们能够定量地预测各种反向偏置条件中的逆层型Si Pd的SupralInity的行为。理论上预测支持的准确实验非线性将促进高精度光学测量，在宽范围的光功率水平和各种反向偏置电压范围内具有高精度的光学测量。（c）2017年光学学会

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《Applied optics》 |2017年第21期|共7页
作者
Tanabe Minoru; Zama Tatsuya; Shitomi Hiroshi;
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Natl Metrol Inst Japan Natl Inst Adv Ind Sci &

Technol 1-1-1 Umezono Tsukuba Ibaraki 3058563 Japan;

Natl Metrol Inst Japan Natl Inst Adv Ind Sci &

Technol 1-1-1 Umezono Tsukuba Ibaraki 3058563 Japan;

Natl Metrol Inst Japan Natl Inst Adv Ind Sci &

Technol 1-1-1 Umezono Tsukuba Ibaraki 3058563 Japan;

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Experimental validation of nonlinearity suppression for an inverse-layer-type silicon photodiode and its prediction based on theoretical modeling

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