首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Depleting and hot-electron injection effect: Mechanism of boosting the photo- respond speed for ZnO nanorods MSM photodetectors by sandwiching Ag nanoparticles in AZO
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Depleting and hot-electron injection effect: Mechanism of boosting the photo- respond speed for ZnO nanorods MSM photodetectors by sandwiching Ag nanoparticles in AZO

机译:耗尽和热电子注入效果:通过在AZO中夹紧AG纳米粒子来提高ZnO Nanorods MSM光电探测器的光响应速度的机理

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摘要

ZnO is one of the most used materials in optoelectronic devices, however, owing to the adsorption of oxygen, ZnO photodetectors (PDs) usually possess slow response in photo detection. In this work, we present the photodetectors of ZnO NRs based on sandwiched AZO/Ag NPs/AZO seed layer. The PDs with Ag NPs embedded showed much fast response speed, judging by the derivative of photocurrent. Meanwhile, the on/off ratio was observed as 750.92 with the responsivity of 66.58 mA/W under Xenon Lamp. The inducement of fast response can be attributed to the cooperation between interfacial depleting and plasmon hot electron injection that triggers "deposition and withdraw" mechanism for the carriers. The mechanism was systematically explored with the characterization under monochromatic excitation including 375, 430 and 520 nm. The sandwich design offers an approach for plasmon NPs of being utilized in semiconductor photodetectors. (C) 2021 Elsevier B.V. All rights reserved.
机译:ZnO是光电器件中最常用的材料之一,但由于其对氧的吸附,ZnO光电探测器(PDs)在光探测中的响应通常比较慢。在这项工作中,我们提出了基于夹层AZO/Ag NP/AZO种子层的ZnO NRs光电探测器。从光电流的导数来看,嵌入银纳米粒子的PDs显示出更快的响应速度。同时,在氙灯下观察到开关比为750.92,响应度为66.58 mA/W。快速响应的诱导可归因于界面耗尽和等离子体激元热电子注入之间的合作,这触发了载流子的“沉积和退出”机制。通过在375、430和520nm单色激发下的表征,系统地探讨了其机理。三明治设计为等离子体激元NPs在半导体光电探测器中的应用提供了一种途径。(c)2021爱思唯尔B.V.保留所有权利。

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