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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Infrared colloidal quantum dots for photoelectric conversion devices
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Infrared colloidal quantum dots for photoelectric conversion devices

机译：用于光电转换装置的红外胶体量子点

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摘要

In recent years, colloidal quantum dots (CQDs) have been widely used in optoelectronic devices due to their advantages including low cost, solution processability, substrate compatibility, and easily tuned photoelectric characteristics via the quantum size effect. However, there are several factors still limiting the further improvement of performances for CQD optoelectronic devices: (1) the incomplete surface passivation of CQDs; (2) a trade-off between absorption and photogenerated carrier collection; and (3) the poor air stability. This review focuses on the methods for performance improvement of CQD-based photoelectric conversion devices including photovoltaic solar cells and photodetectors. Taking CQD solar cells as an example, different surface passivation methods are summarized. To increase the separation and collection of photogenerated carriers, the device architecture is optimized by aligning the energy band and broadening the depletion width. Additionally, device performance can be further enhanced through interface modification which could decrease recombination. In the next section, recent progress in the development of CQD near-infrared (NIR), short-wave infrared (SWIR), and mid-wave infrared (MWIR) photodetectors is reviewed. To overcome the traditional photodetection limitations posed by the dark current/sensitivity/bandwidth trade-off, innovative device architectures are developed. Finally, this review discusses the application of CQD photodetectors in infrared imaging.
机译：近年来，胶体量子点（CQD）以其成本低、溶液可加工性好、衬底相容性好、易于通过量子尺寸效应调节光电特性等优点在光电器件中得到了广泛的应用。然而，仍有几个因素限制了CQD光电器件性能的进一步提高：（1）CQD表面钝化不完全；（2） 吸收和光生载流子收集之间的权衡；（3）空气稳定性差。本文综述了基于CQD的光电转换器件的性能改进方法，包括光伏太阳能电池和光电探测器。以CQD太阳电池为例，总结了不同的表面钝化方法。为了增加光生载流子的分离和收集，通过调整能带和拓宽耗尽宽度来优化器件结构。此外，通过界面修饰可以进一步提高器件性能，从而减少复合。在下一节中，将回顾CQD近红外（NIR）、短波红外（SWIR）和中波红外（MWIR）光电探测器的最新进展。为了克服暗电流/灵敏度/带宽权衡带来的传统光电探测限制，开发了创新的设备架构。最后，本文讨论了CQD光电探测器在红外成像中的应用。

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