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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Multiscale simulations for exploring photo-chemical processes to mitigate the critical dimension variability of contact holes in EUV lithography
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Multiscale simulations for exploring photo-chemical processes to mitigate the critical dimension variability of contact holes in EUV lithography

机译：用于探索光学化学工艺的多尺度模拟，以减轻EUV光刻中的接触孔的关键尺寸变化

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In extreme ultraviolet lithography (EUVL), the non-uniformity of patterned surface roughness of contact holes results in pattern failures such as bridging or missing holes, which affects production yield. In this study, we propose a multiscale model for reproducing 10-35 nm contact hole patterns based on the photo-chemical reactions in a photoresist (PR). To determine the heterogeneous spatial distribution of the resist components at the mesoscopic level, we employed a coarse-graining (CG) strategy for the PR. Additionally, we constructed a statistical model to obtain the novel acid/base distributions using existing MD data. The chemical reaction kinetics were reproduced via the finite difference method (FDM). We predicted resulting hole-patterned surfaces according to the target hole size. The variability in interfacial surface roughness among the holes, which is quantified by local critical dimension uniformity (LCDU), increased with decreasing target hole size, which is consistent with experimental reports. By investigating the photochemistry in the PR at the molecular level, we confirmed that the decrease in the chemical gradient due to the increase in relative acid diffusivity to hole size caused the LCDU and hole-failure probability trends. The diffusivity control enhanced this interpretation further, resulting in mitigation of CD variability in the 10 nm contact holes.
机译：在极紫外光刻（EUVL）中，接触孔图形表面粗糙度的不均匀性会导致图形故障，例如桥接或缺失孔，从而影响生产效率。在这项研究中，我们提出了一个基于光刻胶（PR）中光化学反应的多尺度模型，用于再现10-35nm的接触孔图案。为了在介观水平上确定抗蚀剂组分的非均匀空间分布，我们对PR采用了粗粒化（CG）策略。此外，我们利用现有MD数据构建了一个统计模型以获得新的酸碱分布。通过有限差分法（FDM）再现了化学反应动力学。我们根据目标孔大小预测生成的孔图案表面。通过局部临界尺寸均匀性（LCDU）量化的孔间界面表面粗糙度的可变性随着目标孔尺寸的减小而增加，这与实验报告一致。通过在分子水平上研究PR中的光化学，我们证实了由于酸对孔尺寸的相对扩散率增加而导致的化学梯度的降低导致了LCDU和孔失效概率趋势。扩散率控制进一步增强了这种解释，从而减轻了10nm接触孔中镉的可变性。

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