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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >The fabrication of a photo-carrier transfer channel for a near infrared up-conversion coupled photocathode via a sandwich-like nanostructure
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The fabrication of a photo-carrier transfer channel for a near infrared up-conversion coupled photocathode via a sandwich-like nanostructure

机译：通过夹心状纳米结构制造用于近红外上转换耦合光电阴极的光载波转移通道

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Near infrared (NIR) energy up-conversion (UC) is an important topic related to sustainable energy harvesting. In NIR UC devices, decreasing the transfer impedance of the photocarrier is an urgent challenge. In this work, we fabricate a NaYF4:Er3+-Yb3+/AZO/Cu2O sandwich-like photocathode device. In this structure, the Al-doped ZnO polycrystal thin film (AZO) interlayer acts as a functional channel for photocarrier transfer and back collection, which can reduce the impedance when photocarriers pass through the NaYF4 layer in a traditional NIR-UC coupled photoelectrode. The AZO layer also acts as a buffer layer to decrease the lattice mismatch at the NaYF4:Er3+-Yb3+ and Cu2O interface, resulting in a lower density of interface defects and higher crystallinity of the Cu2O thin film. Based on the dual functions of the AZO interlayer, this NIR-UC coupled photocathode achieved a recorded photocurrent density of 1.0 mA cm(-2) under 980 nm laser (1.0 W cm(-2)) illumination. Therefore, this is a promising strategy to solve the main issue of very high photocarrier transfer impedance in NIR-UC coupled photoelectrodes.
机译：近红外（NIR）能量上转换（UC）是与可持续能源收集相关的重要课题。在近红外UC器件中，降低光载波的传输阻抗是一个紧迫的挑战。在这项工作中，我们制作了一个NaYF4:Er3+-Yb3+/AZO/Cu2O三明治型光电阴极器件。在这种结构中，掺铝的ZnO多晶薄膜（AZO）中间层作为光载流子转移和反向收集的功能通道，可以降低传统NIR-UC耦合光电极中光载流子通过NaYF4层时的阻抗。AZO层还起到缓冲层的作用，以减少NaYF4:Er3+-Yb3+和Cu2O界面的晶格失配，从而降低界面缺陷密度，提高Cu2O薄膜的结晶度。基于AZO中间层的双重功能，这种NIR-UC耦合光电阴极在980 nm激光（1.0 W cm（-2））照明下实现了1.0 mA cm（-2）的记录光电流密度。因此，这对于解决NIR-UC耦合光电极中极高的光载流子转移阻抗这一主要问题是一个很有前途的策略。

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