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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >n-Type organic semiconducting polymers: stability limitations, design considerations and applications
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n-Type organic semiconducting polymers: stability limitations, design considerations and applications

机译：n型有机半导体聚合物：稳定性限制，设计考虑因素和应用

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This review outlines the design strategies which aim to develop high performing n-type materials in the fields of organic thin film transistors (OTFT), organic electrochemical transistors (OECT) and organic thermoelectrics (OTE). Figures of merit for each application and the limitations in obtaining these are set out, and the challenges with achieving consistent and comparable measurements are addressed. We present a thorough discussion of the limitations of n-type materials, particularly their ambient operational instability, and suggest synthetic methods to overcome these. This instability originates from the oxidation of the negative polaron of the organic semiconductor (OSC) by water and oxygen, the potentials of which commonly fall within the electrochemical window of n-type OSCs, and consequently require a LUMO level deeper than similar to-4 eV for a material with ambient stability. Recent high performing n-type materials are detailed for each application and their design principles are discussed to explain how synthetic modifications can enhance performance. This can be achieved through a number of strategies, including utilising an electron deficient acceptor-acceptor backbone repeat unit motif, introducing electron-withdrawing groups or heteroatoms, rigidification and planarisation of the polymer backbone and through increasing the conjugation length. By studying the fundamental synthetic design principles which have been employed to date, this review highlights a path to the development of promising polymers for n-type OSC applications in the future.
机译：本文概述了在有机薄膜晶体管（OTFT）、有机电化学晶体管（OECT）和有机热电材料（OTE）领域开发高性能n型材料的设计策略。列出了每种应用的优值以及获取这些优值的局限性，并讨论了实现一致性和可比性测量的挑战。我们全面讨论了n型材料的局限性，尤其是它们的环境操作不稳定性，并提出了克服这些局限性的合成方法。这种不稳定性源于有机半导体（OSC）的负极化子被水和氧氧化，其电位通常落在n型OSC的电化学窗口内，因此对于具有环境稳定性的材料，需要比类似-4 eV更深的LUMO能级。本文详细介绍了各种应用中最新的高性能n型材料，并讨论了它们的设计原理，以解释合成改性如何提高性能。这可以通过多种策略实现，包括利用缺电子受体-受体骨架重复单元基序、引入吸电子基团或杂原子、聚合物骨架的刚性化和平面化，以及增加共轭长度。通过研究迄今为止所采用的基本合成设计原理，本综述强调了未来开发有前途的n型OSC应用聚合物的途径。

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