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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Remote epitaxy of GaN via graphene on GaN/sapphire templates
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Remote epitaxy of GaN via graphene on GaN/sapphire templates

机译：GaN的GaN遥控河河/蓝宝石模板上的Graphene

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Remote epitaxy via graphene has recently attracted significant attention, since it provides the possibility to lift-off the grown epitaxial layer, reuse the substrate, and produce flexible devices. However, extensive research is still necessary to fully understand the III-nitride formation on the van der Waals surface of a two-dimensional material and utilize remote epitaxy to its full potential. In this work, the growth of a GaN epilayer using a GaN/sapphire template covered with monolayer graphene is presented. Metalorganic vapor phase epitaxy is chosen to fabricate both the template and the nitride epilayer on top as a cost-effective approach toward GaN homoepitaxy. One-step and multi-step growth temperature protocols are demonstrated while paying particular attention to the graphene interface. GaN seed formation on graphene is analyzed to identify remote epitaxy. Crystalline quality improvement of the epilayer by adjusting the growth parameters is further discussed to provide useful insights into GaN growth on a GaN/sapphire template via monolayer graphene.
机译：通过石墨烯的远程外延最近引起了广泛关注，因为它提供了剥离生长的外延层、重用衬底和生产柔性器件的可能性。然而，要充分了解二维材料范德华表面上III型氮化物的形成，并充分利用远程外延技术，还需要进行广泛的研究。在这项工作中，使用覆盖单层石墨烯的GaN/蓝宝石模板生长GaN外延层。选择金属有机气相外延来制作模板和顶部的氮化物外延层，作为实现GaN同质外延的一种经济有效的方法。在特别关注石墨烯界面的同时，演示了一步和多步生长温度协议。分析石墨烯上GaN籽晶的形成以确定远程外延。本文还进一步讨论了通过调整生长参数来改善外延层的结晶质量，从而为通过单层石墨烯在GaN/蓝宝石模板上生长GaN提供有用的见解。

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