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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >From surface data to bulk properties: a case study for antiphase boundaries in GaP on Si(001)
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From surface data to bulk properties: a case study for antiphase boundaries in GaP on Si(001)

机译：从地面数据到散装性质：Si（001）间隙中的抗血清边界的案例研究

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摘要

The orientation, atomic structure, and charge state of defects in crystals have a large influence on the functionality of resultant semiconductor devices. Two-dimensional defects are especially challenging to analyze, as they are embedded within the bulk. We developed a data analysis procedure using information from atomically resolved cross-sectional surface data from two non-parallel surfaces, enabling us to draw conclusions about two-dimensional defects within the bulk. Using antiphase boundaries (APBs) in GaP on Si(001) as a model system, we show that this approach can be applied to any material and microscopy method. For the GaP/Si (001) system and for two-side cross-sectional scanning tunneling microscopy as the experimental tool, the procedure shows that the commonly discussed {111} and {112} APBs do not arise in the investigated sample, whereas the data strongly indicates that previously not recognized {123} APBs are present. Furthermore, a statistical analysis allows a calculation of the net excess charge carrier density introduced into the crystal by the APBs. Its value is negligible compared to the density of wrong bonds that characterize the APBs, since negative and positive excess charges compensate each other almost completely. Moreover, we suggest that controlled enhancement of the formation of APBs may also lead to applications in thermoelectric devices.
机译：晶体中缺陷的取向、原子结构和电荷状态对合成半导体器件的功能有很大影响。二维缺陷尤其难以分析，因为它们嵌入在块体中。我们开发了一个数据分析程序，使用来自两个非平行表面的原子解析横截面数据的信息，使我们能够得出关于块体中二维缺陷的结论。以Si（001）上GaP中的反相边界（APBs）为模型系统，我们证明了这种方法可以应用于任何材料和显微镜方法。对于GaP/Si（001）系统和作为实验工具的双面横截面扫描隧道显微镜，该程序表明，通常讨论的{111}和{112}APB不会出现在所研究的样品中，而数据强烈表明存在以前未识别的{123}APB。此外，统计分析允许计算APB引入晶体的净过剩载流子密度。与表征APB的错误键密度相比，它的价值可以忽略不计，因为负过量电荷和正过量电荷几乎完全相互补偿。此外，我们认为，受控增强APB的形成也可能导致在热电器件中的应用。

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