Refined analysis of C-V and I-V characteristics of Al/dielectric/Si structures containing nanosized Ta2O5/SiOxNy dielectric stack

Novkovski N.

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Refined analysis of C-V and I-V characteristics of Al/dielectric/Si structures containing nanosized Ta2O5/SiOxNy dielectric stack

机译：含纳米氧化物TA2O5 / SiOxNY介电叠层的Al /介电/ Si结构的C-V和I-V特性的精致分析

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In this work we carry out a refined analysis of the C-V and I-V characteristics of Al/Ta2O5/SiOxNy/Si structures at limited voltages (from -3.0 V to +1.0 V). The modified Terman method was used to determine the interface state densities over the silicon bandgap, and an extended comprehensive model was utilised to determine the I-V characteristics of metal/high-kappa/SiO2/Si structures.

机译：在这项工作中，我们对有限电压（从-3.0 V到+1.0 V）下Al/Ta2O5/SiOxNy/Si结构的C-V和I-V特性进行了精细分析。用改进的Terman方法确定了硅带隙上的界面态密度，并用扩展的综合模型确定了金属/高kappa/SiO2/Si结构的I-V特性。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2021年第5期|共9页
作者
Novkovski N.;
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作者单位

Ss Cyril &

Methodius Univ Fac Nat Sci &

Math Inst Phys Arhimedova 3 Skopje 1000 North Macedonia;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
metal-insulator-semiconductor structures; high permittivity dielectrics; interface state density distribution; modified Terman method;

机译：金属绝缘体 - 半导体结构;高介电常数电介质;界面状态密度分布;修改了Terman方法;

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机译：PECVD SiOxNy介电层结构性能与Si / SiOxNy / Al电容器界面电性能的相关性
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机译：利用Al /马来酸酐（MA）/ p-Si结构的I-V和C-V特性研究二极管参数
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机译：Ag（栅极）-Hf：Ta2O5 / SiOxNy-Si（衬底）结构的高场/电流应力和击穿特性
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机译：ALD沉积La2O3 / Al2O3叠层和LaAlO3介电薄膜的电学性能研究
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机译：测量频率对界面天然氧化物层Al / P-Si结构介电特性的影响
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机译：高K介质中网络结构的重要性：LaalO3，pr2O3和Ta2O5

Refined analysis of C-V and I-V characteristics of Al/dielectric/Si structures containing nanosized Ta2O5/SiOxNy dielectric stack

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