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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications
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Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

机译：组-III-氮化物和卤化物 - 钙钛矿半导体增益介质，用于扩增的自发发射和激光应用

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Group-III-nitride optical devices are conventionally important for displays and solid-state lighting, and recently have garnered much interest in the field of visible-light communication. While visible-light laser technology has become mature, developing a range of compact, small footprint, high optical power components for the green-yellow gap wavelengths still requires material development and device design breakthroughs, as well as hybrid integration of materials to overcome the limitations of conventional approaches. The present review focuses on the development of laser and amplified spontaneous emission (ASE) devices in the visible wavelength regime using primarily group-III-nitride and halide-perovskite semiconductors, which are at disparate stages of maturity. While the former is well established in the violet-blue-green operating wavelength regime, the latter, which is capable of solution-based processing and wavelength-tunability in the green-yellow-red regime, promises easy heterogeneous integration to form a new class of hybrid semiconductor light emitters. Prospects for the use of perovskite in ASE and lasing applications are discussed in the context of facile fabrication techniques and promising wavelength-tunable light-emitting device applications, as well as the potential integration with group-III-nitride contact and distributed Bragg reflector layers, which is promising as a future research direction. The absence of lattice-matching limitations, and the presence of direct bandgaps and excellent carrier transport in halide-perovskite semiconductors, are both encouraging and thought-provoking for device researchers who seek to explore new possibilities either experimentally or theoretically. These combined properties inspire researchers who seek to examine the suitability of such materials for potential novel electrical injection devices designed for targeted applications related to lasing and operating-wavelength tuning.
机译：III族氮化物光学器件在传统上对显示器和固态照明非常重要，最近在可见光通信领域引起了极大的兴趣。虽然可见光激光技术已经成熟，但为绿-黄间隙波长开发一系列紧凑、占地面积小、光功率高的组件仍然需要材料开发和设备设计突破，以及材料的混合集成，以克服传统方法的局限性。本文综述了主要使用III族氮化物和卤化物钙钛矿半导体的可见光波段激光和放大自发辐射（ASE）器件的发展，这些器件处于不同的成熟阶段。前者在紫-蓝-绿工作波长范围内得到了很好的应用，而后者能够在绿-黄-红工作波长范围内进行基于溶液的处理和波长可调，有望实现简单的异质集成，形成一类新型的混合半导体光发射器。本文讨论了钙钛矿在ASE和激光应用中的应用前景，包括简单的制造技术和有前途的波长可调谐发光器件应用，以及与III族氮化物接触层和分布式布拉格反射层的潜在集成，这是一个有前途的未来研究方向。在卤化物钙钛矿型半导体中，晶格匹配限制的缺失，以及直接带隙和优秀载流子输运的存在，对于寻求在实验或理论上探索新可能性的器件研究人员来说，都是令人鼓舞和发人深省的。这些综合特性激发了研究人员的兴趣，他们试图研究这种材料是否适用于潜在的新型电注入装置，这些装置设计用于与激光和工作波长调谐相关的目标应用。

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