Donor Complexes Formed by Cu and Zn Multi-Acceptor Impurities in Ge Crystals

Aghamaliev Z. A.; Azhdarov G. Kh

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Donor Complexes Formed by Cu and Zn Multi-Acceptor Impurities in Ge Crystals

机译：Ge晶体中Cu和Zn多受体杂质形成的供体复合物

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Based on Hall effect measurements it is shown that quenching of complexly doped Ge < Zn,Cu > crystals at 1070-1100 K leads to the formation of additional electrically active donor centers with activation energy E-d = E-c - 93 meV in them. Further annealing of crystals at 550-570 K leads to disappearance of these centers. The most likely model of additional deep donor centers is a complex consisting of a pair of substituent zinc atoms (Zn-s) and interstitial copper atoms (Cu-i). The necessity of taking into account the formation of additional donor centers in precise doping Ge < Zn > crystals with copper by the method of decomposition of supersaturated solution of impurity in matrix is demonstrated.

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《Crystallography reports》 |2020年第6期|共4页
作者
Aghamaliev Z. A.; Azhdarov G. Kh;
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Natl Acad Sci Azerbaijan Inst Phys AZ-1143 Baku Azerbaijan;

Natl Acad Sci Azerbaijan Inst Phys AZ-1143 Baku Azerbaijan;

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正文语种 eng
中图分类晶体学;
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Donor Complexes Formed by Cu and Zn Multi-Acceptor Impurities in Ge Crystals

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