...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials and Manufacturing Processes >Developed diamond wire sawing technique with high slicing ability for multicrystalline silicon wafers
【24h】

Developed diamond wire sawing technique with high slicing ability for multicrystalline silicon wafers

机译：用于多晶硅硅晶片的高切割能力开发的金刚石锯切技术

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this work, various reciprocating cycle times of 80, 160, 240, and 320 sec in the diamond wire sawing (DWS) process were adjusted to improve the slicing ability in solar industry. During the same slicing time, the long reciprocating cycle time had less velocity inverse points in comparison with the short reciprocating cycle time. Consequently, the total friction force of the slicing wires used in the DWS process with the short reciprocating cycle time was larger than that of the slicing wires used in the DWS process with the long reciprocating cycle time. It was noting that the lower diamond consumption and better slicing ability in the DWS process with a reciprocating cycle time of 320 sec was obtained in comparison with a reciprocating cycle time of 80 sec. However, since the diamond grits with too high slicing strength to collide the Si material, the serious damages were form on the wafer edge. Therefore, the edge chipping increased to 1.63% as the reciprocating cycle time of 320 sec. The highest mass production yield of 94.22% and the lowest edge chipping of 1.23% for the DWS-sliced mc-Si wafers were obtained as the suitable reciprocating cycle time was 240 sec.
机译：None

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号