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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer
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The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer

机译：（Zn掺杂PVA）界面层Au / n-4h-siC结构的界面性质

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摘要

The Au/n-4H-SiC (MS) type structure with (Zn-doped PVA) interfacial layer was prepared and the interfacial properties were investigated. The energy density distribution profile of the interface states (N-ss) and their relaxation time (tau) and capture cross section (sigma(p)) of this structure was examined by using conduction method, which include a set of capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements. The measured values of C and G/omega at 200 kHz were corrected to examine the R-s effect on them by using Nicollian-Brews method which indicated that R-s is more effective especially at accumulation region at high frequency and hence it must be taken into account in the calculations. Especially, at low frequency, the increase in C can arise from the existence of N-ss at 4H-SiC/(Zn-doped PVA) interface. The profile of N-ss and their tau values were obtained in the energy range of (E-c-0.26)-(E-c-0.83) eV. The values of N-ss were found to be on the order of 1.72 x 10(14) eV(-1) cm(-2) whereas their tau values changed from 1.47 x 10(-4) to 4.22 x 10(-5) s. According to the results, the obtained values are highly suitable for an electronic device such as MS type diodes with and without an interlayer and capacitors. All these results show that (Zn-doped PVA) polymer interlayer can be successfully used instead of insulator such as SiO2 grown by traditional methods such as thermal oxidation. Its low cost, low molecular weight, high strength electric field, flexibility, and easy production methods such as sol-gel and electro-spinning which need not more energy consumption at room temperature are of some advantages.
机译：制备了具有（Zn掺杂PVA）界面层的Au/n-4H-SiC（MS）型结构，并对其界面性能进行了研究。用电导法研究了这种结构的界面态（N-ss）及其弛豫时间（tau）和俘获截面（sigma（p））的能量密度分布，包括一组电容电压（C-V）和电导电压（G/omega-V）测量。使用Nicollian Brews方法对200 kHz时的C和G/omega测量值进行校正，以检查R-s对它们的影响，这表明R-s更有效，尤其是在高频累积区，因此在计算中必须考虑到这一点。特别是在低频下，4H-SiC/（Zn掺杂PVA）界面上N-ss的存在可能导致C的增加。在（E-c-0.26）-（E-c-0.83）eV的能量范围内获得了N-ss的分布及其tau值。N-ss的值约为1.72 x 10（14）eV（-1）cm（-2），而tau值则从1.47 x 10（-4）变为4.22 x 10（-5）s。根据结果，所得值非常适用于电子设备，如有或没有夹层和电容器的MS型二极管。所有这些结果表明，（Zn掺杂PVA）聚合物中间层可以成功地替代传统方法（如热氧化法）生长的SiO2等绝缘体。其成本低、分子量低、电场强度高、柔韧性好、易于生产，如溶胶-凝胶法和电纺法，在室温下不需要更多的能耗。

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