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Optical and dielectric spectroscopic analysis of SmMn2O5

机译:SMMN2O5的光学和介电光谱分析

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摘要

Polycrystalline SmMn2O5 has been synthesized by using sol-gel auto combustion tecnique. X-ray diffraction (XRD) pattern reflects the single phase formation of orthorhombic structure withPbamspace group. In the frequency range of (30-1000 cm(-1)) reflectivity spectrum reveals the 14 infrared active phonons out of 36, which are already pridicted theoretically. We have estimated the optical energy band gap (E-g) 1.5 eV from UV-visible absorption spectrum. Temperature dependent (293-533 K) DC electrical characterization up to 40 V suggests semiconducting nature of the material. The temperature dependent impedance spectroscopy within a broader frequency range of (20 Hz-3 GHz) shows decreasing behavior of dielectric constant and tangent loss while AC conductivity increasing with the rise in frequency and temperature suggest the strong frequency dispersion and relaxational behavior of the material. The activation energy calculation from AC conductivity is in good agreement with semiconducting material energy band gap.
机译:采用溶胶-凝胶自燃烧技术合成了多晶SmMn2O5。X射线衍射(XRD)图谱反映了PBAM空间群正交结构的单相形成。在(30-1000厘米(-1))的频率范围内,反射光谱揭示了36个红外活跃声子中的14个,这些声子在理论上已经被预测。我们根据紫外-可见吸收光谱估算了1.5eV的光学能带隙(E-g)。温度相关(293-533 K)的直流电特性高达40 V,表明该材料具有半导体性质。在更宽的频率范围(20 Hz-3 GHz)内,随温度变化的阻抗谱显示介电常数和切向损耗的降低行为,而交流电导率随着频率和温度的升高而增加,表明材料具有强烈的频散和弛豫行为。由交流电导率计算的活化能与半导体材料的能带隙符合得很好。

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