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首页> 外文期刊>Physics of atomic nuclei >Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4+20%CO2
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Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4+20%CO2

机译：气体放电探测器的寿命延伸，等离子体蚀刻硅沉积物在80％CF4 + 20％CO2中

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摘要

A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO2 and a 60%Ar + 30%CO2 + 10%DF4 working mixture was stimulated by a Sr-90 beta source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF4 + 20%CO2 gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO2 compounds was obtained.
机译：提出了一种消除老化比例计数器阳极线中硅化合物的方法。由Sr-90β源刺激计数器老化，计数器的工作混合物为70%Ar+30%CO2和60%Ar+30%CO2+10%DF4。为了加速老化过程，通过带有RTV涂层壁的管道向计数器供应混合气体。因此，在Q=0.03 C/cm的累积电荷下，信号的振幅已经降低了70%。用80%CF4+20%CO2混合气体放电在导线表面蚀刻硅化合物，使探测器的工作特性完全恢复，寿命延长。对回收的金属丝表面进行了扫描电子显微镜和X射线光谱分析。根据结果，从SiO2化合物中获得了良好的线材清洗质量。

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