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首页> 外文期刊>Physics - Uspekhi >Two-dimensional system of strongly interacting electrons in silicon (100) structures
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Two-dimensional system of strongly interacting electrons in silicon (100) structures

机译：硅（100）结构中强相互作用电子的二维系统

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摘要

Studies of various experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si-MOSFET and (100) SiGe/Si/SiGe quantum wells) in the vicinity of the metal-insulator transition are described and critically analyzed. Results are identified that are common to all research: (i) the effective mass of electrons measured at the Fermi level in the metallic region increases as the electron density decreases and, if extrapolated, tends to diverge; (ii) the behavior of the energy-averaged mass in the metallic region is quite different in the two systems: in SiMOSFETs, it also exhibits a tendency to diverge, while in the SiGe/Si/SiGe quantum wells it saturates in the limit of low electron densities; (iii) there is a small number (depending on the sample quality) of localized electrons in the metallic phase; (iv) the properties that the electron system exhibits in the insulating phase in the vicinity of the metal-insulator transition are typical of amorphous media with a strong coupling between particles.
机译：描述和批判性分析了各种实验组的研究，这些实验组探索了金属-绝缘体转变附近的硅半导体系统（（100）Si MOSFET和（100）SiGe/Si/SiGe量子阱）中二维电子气的性质。确定了所有研究的共同结果：（i）在金属区域费米能级测量的电子有效质量随着电子密度的降低而增加，如果外推，则趋于发散；（ii）在两个系统中，金属区域的能量平均质量行为完全不同：在SIMOSFET中，它也表现出发散的趋势，而在SiGe/Si/SiGe量子阱中，它在低电子密度极限下饱和；（iii）金属相中存在少量（取决于样品质量）局部化电子；（iv）在金属-绝缘体转变附近的绝缘相中，电子系统所表现出的特性是典型的非晶态介质，粒子之间存在强耦合。

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