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Characterisation of a thermionic plasma source apparatus for high-density gaseous plasma antenna applications

机译:高密度气相等离子体天线应用的热离子源装置的表征

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A thermionic plasma source apparatus has been developed and characterised for high-density gaseous plasma antenna (GPA) applications. The system produces a cylindrical plasma column which is 100 mm long with a diameter of 8 mm and operates with a total plasma power consumption of 70 to 200 W, depending mainly on the DC discharge current. The plasma column electron density and temperature is measured via microwave interferometry and optical emission spectroscopy. The plasma properties are investigated for Ar, Kr and Xe at pressures from 1 to 4 mbar. The system has demonstrated higher electron densities (> 10~(19) m~(-3)) at low pressures (< 2 mbar) than has been experimentally achieved before for GPA applications. This could allow for high gain GPA operation comparable to that of conventional metallic antennas. Additionally, the source has demonstrated operation over a wide range of electron densities, from 2 × 10~(18) to 1 × 10~(19) m~(-3), which can allow for frequency hopping. The plasma columns electron temperature remains around 1.5 eV for argon, largely uninfluenced by the pressure or discharge current. These plasma column measurements obtained are used to analyse the plasma properties influence on GPA performance. This analysis indicates that at high density operation, a gain is achieved which is only 22% lower than that of the conventional metallic antenna. Furthermore, the density ranges demonstrated could enable wide-range frequency hopping of over 100 MHz, with a gain greater than 1.3 dBi.
机译:研制了一种热离子等离子体源装置,并对其特点进行了描述,用于高密度气体等离子体天线(GPA)应用。该系统产生的圆柱形等离子体柱长100 mm,直径8 mm,总等离子体功耗为70至200 W,主要取决于直流放电电流。等离子体柱的电子密度和温度通过微波干涉法和光学发射光谱法进行测量。研究了Ar、Kr和Xe在1~4mbar压力下的等离子体性质。该系统在低压(<2毫巴)下的电子密度(>10~(19)m-3))高于GPA应用之前的实验结果。这可以实现与传统金属天线相当的高增益GPA操作。此外,该源在2×10~(18)到1×10~(19)m~(-3)的电子密度范围内工作,可以实现跳频。氩等离子体柱的电子温度保持在1.5 eV左右,基本不受压力或放电电流的影响。这些等离子体柱测量结果用于分析等离子体性质对GPA性能的影响。分析表明,在高密度工作时,增益仅比传统金属天线低22%。此外,演示的密度范围可以实现100 MHz以上的宽范围跳频,增益大于1.3 dBi。

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