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首页> 外文期刊>The British journal of psychiatry : >Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and V-th Stability under Positive Gate Bias Stress in AlGaN/GaN MIS-HEMTs
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Surface Preconditioning and Postmetallization Anneal Improving Interface Properties and V-th Stability under Positive Gate Bias Stress in AlGaN/GaN MIS-HEMTs

机译：表面预处理和后金属化退火改善界面偏压下的界面性能和V-TH稳定性在AlGaN / GaN MIS-HEMTS下

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摘要

Trap states at the dielectric/GaN interface of AlGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) can cause threshold voltage (V-th) instability especially under positive gate bias stress. Herein, the influence of O-2 plasma surface preconditioning (SPC) before the atomic layer deposition of the Al2O3 gate dielectric and of N-2 postmetallization anneal (PMA) after gate metallization on the Al2O3/GaN interface quality is investigated. The interface is characterized by multifrequency capacitance-voltage measurements which show a smaller frequency dispersion after the employment of SPC and PMA treatments with a reduction of the interface trap density D-it to a value in the order of 2 x 10(12) cm(-2) eV(-1) near the conduction band edge. The effectiveness of SPC and PMA is demonstrated in Al2O3/AlGaN/GaN MIS-HEMTs by pulsed current-voltage measurements which reveal improved V-th stability.
机译：AlGaN/GaN基金属-绝缘体-半导体高电子迁移率晶体管（MIS-HEMT）介电/GaN界面的陷阱态会导致阈值电压（V-th）不稳定，尤其是在正栅偏压下。本文研究了Al2O3栅介质原子层沉积前的O-2等离子体表面预处理（SPC）和栅金属化后的N-2金属化后退火（PMA）对Al2O3/GaN界面质量的影响。界面以多频电容电压测量为特征，采用SPC和PMA处理后，界面陷阱密度D-it在导带边缘附近降低至2 x 10（12）cm（-2）eV（-1）量级，显示出较小的频散。在Al2O3/AlGaN/GaN MIS HEMT中，通过脉冲电流-电压测量证明了SPC和PMA的有效性，显示了改善的V-th稳定性。

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