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首页> 外文期刊>Zeitschrift fur Anorganische und Allgemeine Chemie >Synthesis, Crystal and Electronic Structure of Layered AMSb Compounds (A = Rb, Cs; M = Zn, Cd)
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Synthesis, Crystal and Electronic Structure of Layered AMSb Compounds (A = Rb, Cs; M = Zn, Cd)

机译:层状AMSB化合物的合成,晶体和电子结构(A = RB,CS; M = Zn,CD)

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摘要

Synthesis, crystal structure, thermal stability, and electronic band structure of four new metal antimonides AMSb (A = Rb, Cs; M = Zn, Cd) are reported. CsZnSb and RbZnSb crystallize in the hexagonal ZrBeSi structure type, in a P6_3/mmc space group (no. 194, Z = 2) and unit cell dimensions of a = 4.5588(2)/4.5466(4) ? and c = 11.9246(6)/ 11.0999(10) ?. CsCdSb and RbCdSb crystallize in the tetragonal PbFCl structure type in a P4/nmm space group (no. 129; Z = 2) and unit cell parameters of a = 4.8884(5)/4.8227(3) ? and c = 8.8897(9)/ 8.5492(7) ?. All four compounds are air- and water-sensitive and are shown through DSC measurements to decompose between 975 K and 1060 K. Analysis of the calculated electronic band structure shows that the Zn-containing antimonides are topologically trivial narrow bandgap semiconductors, whereas Cd-containing compounds exhibit a band inversion along Γ-Z direction.
机译:报道了四种新型金属锑化物AMSb(A=Rb,Cs;M=Zn,Cd)的合成、晶体结构、热稳定性和电子能带结构。CsZnSb和RbZnSb在P6_3/mmc空间群(编号194,Z=2)中以六方ZrBeSi结构类型结晶,晶胞尺寸为a=4.5588(2)/4.5466(4)?c=11.9246(6)/11.0999(10)?。CsCdSb和RbCdSb在P4/nmm空间群(第129位;Z=2)中以四方PbFCl结构类型结晶,单位晶胞参数a=4.8884(5)/4.8227(3)?c=8.8897(9)/8.5492(7)?。所有四种化合物都对空气和水敏感,通过DSC测量显示,它们在975 K和1060 K之间分解。对计算出的电子能带结构的分析表明,含锌的锑化物是拓扑结构简单的窄带隙半导体,而含镉的化合物沿Γ-Z方向呈现出带反转。

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