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首页> 外文期刊>Journal of industrial and engineering chemistry >Facilitation of the thermochemical mechanism in NiO-based resistive switching memories via tip-enhanced electric fields
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Facilitation of the thermochemical mechanism in NiO-based resistive switching memories via tip-enhanced electric fields

机译：通过尖端增强电场促进NIO基电阻开关存储器的热化学机理

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Transition metal oxides have attracted considerable attention as a switching material for resistive random access memory (RRAM) based on the thermochemical mechanism (TCM). However, the heat energy required for resistance switching is applied to the entire area of the RRAM without position selectivity, causing random growth of conductive filaments (CFs) and degrading device performance. This study showed that structured electrodes can promote the TCM in nickel oxide (NiO)-based RRAM by enhancing the electric field within the switching material and controlling Joule heat generation locally. Pyramid-structured electrodes with an extremely sharp tip prepared by the template-stripping method achieve an electric field in the tip region that is similar to 5 times larger than that of conventional planar electrodes. The tip-enhanced electric field can induce a local temperature rise, which facilitates the TCM for nucleation and CF growth. The resulting RRAMs exhibit low and reliable forming, SET and RESET voltages (1.96 +/- 0.14 V, 1.44 +/- 0.12 V, and 0.64 +/- 0.05 V, respectively). Moreover, their retention time and resistance ratio (R-HRS/R-LRS) are greatly improved, by 10 and 10(2) times, respectively, compared to planar devices. This approach can achieve position selectivity in TCM-based resistance switching, and could lead to the development of high-performance RRAM. (c) 2020 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.
机译：过渡金属氧化物作为一种基于热化学机理（TCM）的电阻式随机存取存储器（RRAM）开关材料引起了广泛关注。然而，电阻切换所需的热能在没有位置选择性的情况下应用于RRAM的整个区域，导致导电丝（CFs）的随机生长和器件性能的降低。这项研究表明，结构电极可以通过增强开关材料内部的电场和局部控制焦耳热的产生来促进氧化镍基RRAM中的TCM。通过模板剥离方法制备的具有极尖尖端的金字塔结构电极在尖端区域获得的电场类似于传统平面电极的5倍。尖端增强的电场会导致局部温度升高，这有利于TCM成核和CF生长。由此产生的RRAM显示出低且可靠的形成、设置和重置电压（分别为1.96+/-0.14 V、1.44+/-0.12 V和0.64+/-0.05 V）。此外，与平面器件相比，它们的保留时间和电阻比（R-HRS/R-LRS）分别提高了10倍和10（2）倍。这种方法可以在基于TCM的电阻切换中实现位置选择性，并可能导致高性能RRAM的开发。（c） 2020年，韩国工业和工程化学学会。由爱思唯尔B.V.出版。版权所有。

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