Thermodynamic simulation and experimental investigation of reactive chemical vapor deposition in the Ta-C-Si-O-F system

Lozanov V. V.; Baklanova N. I.; Piryazev D. A.

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Thermodynamic simulation and experimental investigation of reactive chemical vapor deposition in the Ta-C-Si-O-F system

机译：TA-C-Si-F-F系统中反应化学气相沉积的热力学模拟及实验研究

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Reactive deposition processes of tantalum carbide are studied experimentally and theoretically in the Ta-C-Si-O-F system. It is shown that Sio(2) substantially affects the carbide formation process. This is expressed in a decreased efficiency of tantalum transfer from the source zone to the crystallization zone, the possibility of bilateral transport of tantalum to carbon and carbon to tantalum, the complicated composition of condensed phases in the equilibrium with the gas phase. Aspects of preparing single crystal tantalum oxyfluoride are considered.

机译：在Ta-C-Si-O-F体系中，对碳化钽的反应沉积过程进行了实验和理论研究。结果表明，sio2对碳化物的形成过程有很大的影响。这表现为钽从源区转移到结晶区的效率降低、钽向碳和碳向钽的双边转移的可能性、与气相平衡的凝聚相的复杂组成。考虑了制备单晶氟化钽的各个方面。

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来源
《Journal of structural chemistry》 |2017年第8期|共7页
作者
Lozanov V. V.; Baklanova N. I.; Piryazev D. A.;
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作者单位

Russian Acad Sci Inst Solid State Chem &

Mechanochem Siberian Branch Novosibirsk Russia;

Russian Acad Sci Inst Solid State Chem &

Mechanochem Siberian Branch Novosibirsk Russia;

Russian Acad Sci Siberian Branch Nikolaev Inst Inorgan Chem Novosibirsk Russia;

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原文格式 PDF
正文语种 eng
中图分类结构化学;
关键词
thermodynamic simulation; vapor deposition; tantalum carbide; tantalum oxyfluoride; single crystal;

机译：热力学模拟;气相沉积;碳化钽;氟化钽;单晶;

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Thermodynamic simulation and experimental investigation of reactive chemical vapor deposition in the Ta-C-Si-O-F system

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