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首页> 外文期刊>Journal of surface investigation: x-ray, synchrotron and neutron techniques >Surface Modification of Pb1-xSnxSe Films during Plasma Treatment Near the Sputtering Threshold
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Surface Modification of Pb1-xSnxSe Films during Plasma Treatment Near the Sputtering Threshold

机译：溅射阈值附近等离子体处理过程中PB1-XSNXSE薄膜的表面改性

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摘要

The processes of the plasma sputtering of epitaxial lead-tin selenide films near the sputtering threshold are studied. Pb1 - xSnxSe films (x = 0.03, 0.07) with a thickness of 0.5-2 microns are grown by molecular-beam epitaxy on CaF2/Si(111) substrates. The films are plasma treated with radio-frequency high-density low-pressure inductively coupled argon plasma with an ion energy of 20-25 eV at typical process times of 60-360 s. As a result of plasma treatment for a prolonged period, the formation of hollow metal particles of nano- and submicron sizes is observed on the surface. Using scanning electron microscopy methods, it is shown that the lateral dimensions of the obtained structures, their shape and surface density vary over wide ranges and significantly depend on the time of plasma sputtering. The features of plasma sputtering for the studied films and films of a binary compound of lead selenide are compared.
机译：研究了溅射阈值附近外延硒化铅锡薄膜的等离子体溅射过程。用分子束外延法在CaF2/Si（111）衬底上生长了厚度为0.5-2微米的Pb1-xSnxSe薄膜（x=0.03,0.07）。采用射频高密度低压感应耦合氩等离子体对薄膜进行等离子体处理，离子能量为20-25 eV，典型处理时间为60-360秒。经过长时间的等离子体处理，可在表面观察到纳米和亚微米尺寸的空心金属颗粒的形成。利用扫描电子显微镜的方法，我们发现所获得的结构的横向尺寸、形状和表面密度在很大范围内变化，并且显著地依赖于等离子体溅射的时间。比较了所研究薄膜和二元硒化铅化合物薄膜的等离子体溅射特性。

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